The cathodoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering is investigated.Apart from the characteristic green emission band(522nm)of ZnO,an ultraviolet(392nm)band and a blue(430-460 nm)...The cathodoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering is investigated.Apart from the characteristic green emission band(522nm)of ZnO,an ultraviolet(392nm)band and a blue(430-460 nm)band have been observed.The x-ray diffraction and cathodoluminescent spectra reveal the dependences of the luminescence on the preparation conditions and crystallinity of the ZnO films.展开更多
The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated.The I-V,I-T curves,and deep level transient spectra are measured.Fr...The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated.The I-V,I-T curves,and deep level transient spectra are measured.From these results,we acquire the information of the characteristics of the junction,and compute some energy levels of the samples.展开更多
A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is investigated.The current-voltage characteristics under dark or illumination were determined.Tt is indicated tha...A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is investigated.The current-voltage characteristics under dark or illumination were determined.Tt is indicated that the sample is likely a semiconductorjunction,and this structure generates an obvious photovoltaic effect.Spectral responses of photovoltage,cathodotoluminescence and excitation spectra at room temperature were employed to study the structural properties and the mechanism generating photovoltaic effect of the samples.The energy level and the process of electron transition in the ZnO film have also been deduced.展开更多
文摘The cathodoluminescence of ZnO films deposited on Si substrates by reactive dc sputtering is investigated.Apart from the characteristic green emission band(522nm)of ZnO,an ultraviolet(392nm)band and a blue(430-460 nm)band have been observed.The x-ray diffraction and cathodoluminescent spectra reveal the dependences of the luminescence on the preparation conditions and crystallinity of the ZnO films.
基金Supported by the National Natural Science Foundation of China under Grant No.59872037the Natural Science Foundation of Anhui Province No.98641550.
文摘The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated.The I-V,I-T curves,and deep level transient spectra are measured.From these results,we acquire the information of the characteristics of the junction,and compute some energy levels of the samples.
基金Supported by the National Natural Science Foundation of China under Grant No.59872037the Natural Science Foundation of Anhui Province No.98641550.
文摘A type of semiconductor heterostructure fabricated by zinc-oxide films deposited on silicon substrates is investigated.The current-voltage characteristics under dark or illumination were determined.Tt is indicated that the sample is likely a semiconductorjunction,and this structure generates an obvious photovoltaic effect.Spectral responses of photovoltage,cathodotoluminescence and excitation spectra at room temperature were employed to study the structural properties and the mechanism generating photovoltaic effect of the samples.The energy level and the process of electron transition in the ZnO film have also been deduced.
