Lead zirconate titanate thin films were prepared by pulsed excimer laser deposition on silicon substrates.Rapid thermal annealing was used to improve its properties.Structural and interfacial characteristics of the fi...Lead zirconate titanate thin films were prepared by pulsed excimer laser deposition on silicon substrates.Rapid thermal annealing was used to improve its properties.Structural and interfacial characteristics of the films before and after annealing were investigated by x-ray diffraction,Rutherford backscattering spectrometry and automatic spreading resistance。展开更多
Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface...Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface roughness due to the islanding was observed during the deposition.The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.展开更多
Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly ...Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly depends on the depositing condition.Observation by transmission electron microscope revealed the polycrystalline nature and the mean crystallite size was about 200nm.展开更多
Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation ...Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter,S.It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics.In particular,the S parameter of epitavial CoSi_(2)formed by the ternary reaction is quite different from that of the polycrystalline CoSi_(2)formed by direct reaction of Co with Si.展开更多
The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques ...The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation.展开更多
In this paper,we investigated the dose window of forming a continuous buried oxide(BOX) layer by single implantation at the implantation energy of 200 keV. Then,an improved two-step implantation process with second im...In this paper,we investigated the dose window of forming a continuous buried oxide(BOX) layer by single implantation at the implantation energy of 200 keV. Then,an improved two-step implantation process with second implantation dose of 3×1015 cm-2 was developed to fabricate high quality separation by implanted oxygen(SIMOX) silicon on insulator(SOI) wafers. Compared with traditional single implantation,the implantation dose is reduced by 18.2%. In addition,the thickness and uniformity of the BOX layers were evaluated by spectroscopic ellipsometry. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces were observed by transmission electron microscopy,indicating a high crystal quality and a perfect structure of the SOI fabricated by two step implantation. The top Si/BOX interface morphology of the SOI wafers fabricated by single or two-step implantation was also investigated by atomic force microscopy.展开更多
文摘Lead zirconate titanate thin films were prepared by pulsed excimer laser deposition on silicon substrates.Rapid thermal annealing was used to improve its properties.Structural and interfacial characteristics of the films before and after annealing were investigated by x-ray diffraction,Rutherford backscattering spectrometry and automatic spreading resistance。
基金Supported by the National Natural Science Foundation of Shanghai,the People's Republic of China,No.94JC14006.
文摘Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface roughness due to the islanding was observed during the deposition.The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.
基金Supported by the Natural Science Foundation of Shanghaithe People's of China,No.94JC14006.
文摘Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly depends on the depositing condition.Observation by transmission electron microscope revealed the polycrystalline nature and the mean crystallite size was about 200nm.
文摘Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter,S.It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics.In particular,the S parameter of epitavial CoSi_(2)formed by the ternary reaction is quite different from that of the polycrystalline CoSi_(2)formed by direct reaction of Co with Si.
文摘The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated.Cross-sectional trajismission electron microscopyt Rutherford backsca,ttering and channeling techniques have been employed to characterize these layers.Microtwins and threading dislocation are the predominant defects in the layers.Most of the misfit dislocation are conGned within the Ga.As and Si interface region by forming a type of edge dislocation.
基金supported by the National Science and Technology Major Projects of China (2009ZX02040)the National Basic Research Program of China (2010CB832906)+2 种基金the National Natural Science Foundation of China (60721004 and 61006088)Shanghai Foundation for Development of Science and Technology (08520740100)the Natural Science Foundation of Shanghai (10ZR1436100)
文摘In this paper,we investigated the dose window of forming a continuous buried oxide(BOX) layer by single implantation at the implantation energy of 200 keV. Then,an improved two-step implantation process with second implantation dose of 3×1015 cm-2 was developed to fabricate high quality separation by implanted oxygen(SIMOX) silicon on insulator(SOI) wafers. Compared with traditional single implantation,the implantation dose is reduced by 18.2%. In addition,the thickness and uniformity of the BOX layers were evaluated by spectroscopic ellipsometry. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces were observed by transmission electron microscopy,indicating a high crystal quality and a perfect structure of the SOI fabricated by two step implantation. The top Si/BOX interface morphology of the SOI wafers fabricated by single or two-step implantation was also investigated by atomic force microscopy.
