Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to hi...Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.展开更多
Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction and...Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction and x-ray photoelectron microscopy.Average size of microcrystallites,depending on the substrate temperature during deposition,is 3-10nm.Absorption spectra of the films were measured.Blue shift of absorption edge was observed and discussed according to quantum confinement effect.展开更多
基金the National Natural Science Foundation of China under Grant No.19475027Natural Science Foundation of China under Grant No.950822.
文摘Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.
文摘Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction and x-ray photoelectron microscopy.Average size of microcrystallites,depending on the substrate temperature during deposition,is 3-10nm.Absorption spectra of the films were measured.Blue shift of absorption edge was observed and discussed according to quantum confinement effect.
