The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated.The I-V,I-T curves,and deep level transient spectra are measured.Fr...The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated.The I-V,I-T curves,and deep level transient spectra are measured.From these results,we acquire the information of the characteristics of the junction,and compute some energy levels of the samples.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.59872037the Natural Science Foundation of Anhui Province No.98641550.
文摘The electrical Properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated.The I-V,I-T curves,and deep level transient spectra are measured.From these results,we acquire the information of the characteristics of the junction,and compute some energy levels of the samples.
