Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated.The devices with a gate length of 160nm and a gate periphery of 2 × 75μmexhib...Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated.The devices with a gate length of 160nm and a gate periphery of 2 × 75μmexhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics,compared with conventional HEMTs.Furthermore,the extrinsic transconductance of an MOSHEMT is 237.2mS/mm,only 7% lower than that of Schottky-gate HEMT.An extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal measurements.The high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.展开更多
基金Supported by Major Program of the National Natural Science Foundation of China under Grant No 60890191the National Basic Research Program of China under Grant No 2010CB327503.
文摘Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated.The devices with a gate length of 160nm and a gate periphery of 2 × 75μmexhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics,compared with conventional HEMTs.Furthermore,the extrinsic transconductance of an MOSHEMT is 237.2mS/mm,only 7% lower than that of Schottky-gate HEMT.An extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal measurements.The high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.
