We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials,in the presence of a uniform electric f...We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials,in the presence of a uniform electric field applied parallel to the dot axis.The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii,then begins to drop quickly.Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position,dot thickness and applied electric field are also presented.展开更多
基金by the National Natural Science Foundation of China under Grant No 10847004.
文摘We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials,in the presence of a uniform electric field applied parallel to the dot axis.The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii,then begins to drop quickly.Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position,dot thickness and applied electric field are also presented.
