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Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector
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作者 liu shu-ping jia yue-hu 《Semiconductor Photonics and Technology》 CAS 2006年第1期21-24,共4页
According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is ... According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out. 展开更多
关键词 GESI/SI Superlattice nanoerystalline PHOTODETECTOR
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