Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge...Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge_(x)/Si structure,the switch current and insertion loss at wavelength 1.3 fiin are 36 mA and 2.8 dB,respectively.The switching response time is 40 ns.展开更多
基金Supported by the National Natural Science Foundation of China.
文摘Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge_(x)/Si structure,the switch current and insertion loss at wavelength 1.3 fiin are 36 mA and 2.8 dB,respectively.The switching response time is 40 ns.
