Growth of Biaxially Textured Yttria-Stabilized Zirconia Thin Films on Si(lll) Substrate by Ion Beam Assisted Deposition

The(001)oriented yttria-stabilized zirconia(YSZ)Hlms with in-plane biaxial texture have been deposited on Si(111)substrates by ion beam assisted deposition at ambient temperature.The effects of ion/atom arrival rate fatio(R=(Ar^(+)+O2^(+))/ZrO_(2))and incident angle of bombarding ion beam on the Him texture development were investigated.It was found that the in-plane biaxial texture of the films was improved gradually with increasing ion/atom arrival rate ratio R up to a critical value 1,9,but it was degraded with the further increase of R.The optimal in-plane biaxial texture,whose full width at half maximum of the(111)4>-scan spectrum is 14°,can be obtained at R=1.9 and incident angle of 55°.For a fixed R,the optimal crystallinity and in-plane biaxial alignment of the YSZ Hlms did not appear at the same incident angle and showed an opposite variation with the change of the incident angle from 51°to 55°.C-axis alignment(perpendicular to substrate surface)does not show any substantial variation with the change of incident angle within the range of 47°-56°.

Thermodynamic and Kinetic Characteristics of Glass Transition in an Amorphous Alloy Pd_(77.5)Ni_(6.0)Si_(16.5)

Variation of some thermodynamic functions of an amorphous alloy Pd_(77.5)Ni_(6.0)Si_(16.5) in glass transition temperature region during various scans was measured by a differential scanning calorimeter.The Gibbs free energy of glassy state was examined to be larger than that of the undercooled liquid state when the specimen was heated up to the glass transition temperature region,which supports the idea of what there are thermodynamic origins underlying glass transition process.On the other hand,it was found that glass transition behaved differently during heating and cooling scans.Moreover,with increase of heating rate,the glass transition process was delayed gradually to higher temperatures.It can be concluded that glass transition is a kinetically modified thermodynamic phase transformation.

Electron Field Emission from Different sp3 Content Diamond-Like Carbon Films

Different sp^(3) content diamond-like carbon films are deposited on to highly n-doped Si(111)substrates by a new plasma deposition technique-filtered arc deposition.Their electron field emission properties are studied by using a simple diode structure.It is showed that the turn-on field is decreased and field emission current density is increased with the increasing sp3 content(75-80%,80-83%,and 88-90%)of the films.Field emission current of 0.1μA from the three samples was detected under the electric field of 10.1,5.6,and 2.9 V/μm and emission current density of 4.4,15.2,and 43.2μA/cm^(2),respectively,under 14.3 V/μm.Fowler-Nordheim(F-N)plots of the three samples nearly show of lineaity indicating that electron field emission obeys F-N theory.

Porous Structures and Short-Wavelength Photoluminescence of C^(+)-Implanted SiO_(2) Films

C ions of three different energies were sequentially implanted into SiO_(2) films grown by plasma enhanced chemical vapor deposition.Microstructures of the samples were studied with transmission electron microscopy(TEM)and secondary ion mass spectroscopy As revealed by cross-sectional TEM,porous structures had been created in the implanted region during ion implantation.No photoluminescence(PL)was detected from the as-implanted samples.However,intense short-wavelength PL peaking at 360-370nm and ~450nm was observed from the annealed samples.The blue light from samples excited by an Xe lamp can be observed by naked eyes at room temperature.The light emission mechanisms are briefly discussed.