Objective To observe the effects of Zhuang Gu Zhi Tong Formula (ZGZTF) on antagonist SOST in canonical Wnt/β-catenin signaling pathway in osteoporosis. Methods We analyzed the differential genes of patients with oste...Objective To observe the effects of Zhuang Gu Zhi Tong Formula (ZGZTF) on antagonist SOST in canonical Wnt/β-catenin signaling pathway in osteoporosis. Methods We analyzed the differential genes of patients with osteoporosis and normal subjects from the GEO database and then found SOST with specific expression. We analyzed SOST as an antagonist of the Wnt signaling pathway by the Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway. Then we studied the effect of ZGZTF on SOST in Wnt signaling pathway. Osteoporosis model was induced by ovariectomy (OVX) in 8-week-old female Sprague–Dawley (SD) rats. After 12 weeks of treatment with ZGZTF by intragastric administration, the rats were put to death in batch. The changes of alkaline phosphatase (ALP), bone gla protein (BGP) and estradiol (E2) in serum were determined, and bone mineral density (BMD) and histomorphology of right femur were observed. Biomechanics of lumbar vertebra were measured, and the expression of SOST, Wnt3a,β-catenin, LRP5, Runx2, Osx and their mRNA involving the canonical Wnt/β-catenin signaling pathway were detected by Western blot, RT-PCR and Immunohistochemical analysis. All data were analyzed by SPSS 22.0. Results Twelve weeks of treatment with ZGZTF could significantly decrease the level of ALP and BGP in serum, increase the BMD of femurs, and improve the biomechanical capability of vertebral body in maximum loading and elastic modulus. Concerning histomorphology, we found ordered arrangement of trabeculae, slightly thinning of trabeculae and none obvious slight fractures in femurs after 12 weeks of treatment with ZGZTF. The expression of LRP5,β-catenin, Runx2 and Osx involved in the canonical Wnt/β-catenin signaling pathway was significantly up-regulated in the presence of ZGZTF,and the expression of SOST in this pathway was down-regulated. Conclusions These results suggest that ZGZTF may be antiosteoporosis by down-regulating SOST protein to promote Wnt/β-catenin signaling pathway.展开更多
By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substra...By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition.The results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction technique.When the indium composition is low,the a-plane In_(x)𝑦Ga_(1−x)𝑦N layer is tensile strain in the growth direction(𝑏a-axis)and compressive strain in the two in-plane directions(𝑛a-axis and𝑑a-axis).The strain status becomes contrary when the indium composition is high.The stress in the𝑛a-axis direction𝜏σyy is larger than that in the a-axis directionσzz.Furthermore,strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the In_(x)Ga_(1−z)N film.展开更多
Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500℃.X-ray (O) scanning indicates that there are six kinds of in-pla...Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500℃.X-ray (O) scanning indicates that there are six kinds of in-plane domain growths,with the ZnO [1012] parallel to the Si (11(2)〉 direction families.The crystallographic orientation of ZnO is supposed to be caused by surface passivation.The methanol,as a polar molecule,may be adsorbed on the Si (111) surface to form a passivation layer,which inhibits the (0001) ZnO plane deposition on the substrate surface,and as a result the ZnO (1011) plane becomes preferred.The optical properties,examined by a roomtemperature photoluminescence spectrum,exhibit a strong near-band-edge emission peak at 379nm,indicating that the (1011) ZnO film has good crystal quality.These results are significant for research into and for the applications of semi-polar ZnO films.展开更多
The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on rsapphire is studied.The influences of Ⅴ/Ⅲ ratio and growth temperature on surface morphology are investigated.Ⅴ-p...The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on rsapphire is studied.The influences of Ⅴ/Ⅲ ratio and growth temperature on surface morphology are investigated.Ⅴ-pits and stripes are observed on the surface of a-GaN grown at 1050 ℃ and 1100℃,respectively.The overall orientation and geometry of Ⅴ-pits are uniform and independent on the Ⅴ/Ⅲ molar ratio in the samples grown at 1050 ℃,while in the samples grown at 1100 ℃,the areas of stripes decrease with the adding of Ⅴ/Ⅲ ratio.We deduce the origin of Ⅴ-pits and stripes by annealing the buffer layers at different temperatures.Because of the existence of inclined (10(-1)1) facets,Ⅴ-pits are formed at 1050℃.The (10(-1)1) plane is an N terminated surface,which is metastable at higher temperature,so stripes instead of V-pits are observed at 1100℃.Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films.Hence,to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire.展开更多
High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital tr...High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.展开更多
The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions...The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions x are estimated from x-ray diffraction measurements.The in-plane orientation of the In_(x)Ga_(1−x)N with respect to the r-plane substrate is confirmed to be[1100]sapphire||[1120]In_(x)Ga_(1−x)N and[1101]sapphire||[0001]In_(x)Ga_(1−x)N.The effects of substrate temperature,reactor pressure and trimethylindium input flow on the indium incorporation and growth rate are investigated.The morphology of the a-plane In_(x)Ga_(1−x)N is found to be significantly improved with the decreasing indium composition x and growth rate.Moreover,the in-plane anisotropic structural characteristics are revealed by high resolution x-ray diffraction employing azimuthal dependence,and the degree of anisotropy decreases with the increase of indium composition.展开更多
目的 Y染色体性别决定区域相关高迁移率族盒21基因(sex-determining regio of Y chromosome related high-mobility-group box 21,SOX21)在结直肠癌组织中发生异常甲基化,然而该基因在结肠癌粪便标本中是否发生异常甲基化及其意义尚不...目的 Y染色体性别决定区域相关高迁移率族盒21基因(sex-determining regio of Y chromosome related high-mobility-group box 21,SOX21)在结直肠癌组织中发生异常甲基化,然而该基因在结肠癌粪便标本中是否发生异常甲基化及其意义尚不清楚。本研究检测组织和粪便标本中SOX21基因启动子区甲基化水平,旨在评估甲基化的SOX21基因作为结直肠癌粪便基因检测标志物价值。方法选取2014-05-20-2015-02-26中山大学附属第六医院胃肠外科收治的105例结直肠癌患者的癌与癌旁正常组织,分别组成结直肠癌组和癌旁正常组。以及2014-04-03-2016-10-10收治的240例患者粪便标本,其中结直肠癌80例为结直肠癌组,腺瘤77例为腺癌组,正常83例为正常组。采用定量甲基化特异性聚合酶链式反应(quantitative methylation specific polymerase chain reaction,qMSP)技术检测SOX21基因甲基化水平,计算敏感性、特异性和ROC曲线下面积,并分析SOX21基因甲基化与结直肠癌患者临床病理特征之间关系。结果组织标本结果显示,肿瘤组织SOX21基因甲基化水平高于其对应癌旁组织,Z=8.679,P<0.001;当甲基化的SOX21特异性为97.1%(102/105)时,结直肠癌检出率为84.8%(89/105);ROC曲线下面积为0.930,95%CI为0.889～0.971;SOX21甲基化与年龄、性别、部位、TNM分期、肿瘤大小和分化程度无关联,均P>0.05。粪便标本结果显示,结直肠癌组和腺瘤组SOX21甲基化水平高于正常组,P<0.05。当甲基化的SOX21特异性为97.6%(81/83)时,对结直肠癌敏感性为80.0%(64/80),对腺瘤敏感性为33.8%(26/77);SOX21检测结直肠癌的ROC曲线下面积为0.926,95%CI为0.885～0.968,检测腺瘤的ROC曲线下面积为0.667,95%CI为0.583～0.751;SOX21基因对肿瘤检出率与肿瘤近、远端发生位置有关联,远端肿瘤检出率高,χ2=17.372,P<0.001,但与年龄、性别、TNM分期、肿瘤大小和分化程度无关联,P>0.05。结论在结直肠癌组织和粪便标本中,SOX21基因启动子区均发生异常高甲基化。甲基化的SOX21基因是结直肠癌粪便基因检测的潜在良好标志物。展开更多
基金the funding support from the National Natural Science Foundation of China (No. 81573956)Natural Science Foundation of Hunan Province (No. 2018JJ2297)+3 种基金Key Program of Chinese Medicine Science Research Plan of Hunan Province (No. 201612)Key Program of Scientific Research Fund of Hunan Provincial Education Department (No. 16A162)National College Students Innovation and Entrepreneurship Project (No. 201710541002)The Project of Research Learning and Innovative Experiment for College Students in Hunan (No. 2015217, No. 2015220, No. 2016284 and No. 2016281)
文摘Objective To observe the effects of Zhuang Gu Zhi Tong Formula (ZGZTF) on antagonist SOST in canonical Wnt/β-catenin signaling pathway in osteoporosis. Methods We analyzed the differential genes of patients with osteoporosis and normal subjects from the GEO database and then found SOST with specific expression. We analyzed SOST as an antagonist of the Wnt signaling pathway by the Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway. Then we studied the effect of ZGZTF on SOST in Wnt signaling pathway. Osteoporosis model was induced by ovariectomy (OVX) in 8-week-old female Sprague–Dawley (SD) rats. After 12 weeks of treatment with ZGZTF by intragastric administration, the rats were put to death in batch. The changes of alkaline phosphatase (ALP), bone gla protein (BGP) and estradiol (E2) in serum were determined, and bone mineral density (BMD) and histomorphology of right femur were observed. Biomechanics of lumbar vertebra were measured, and the expression of SOST, Wnt3a,β-catenin, LRP5, Runx2, Osx and their mRNA involving the canonical Wnt/β-catenin signaling pathway were detected by Western blot, RT-PCR and Immunohistochemical analysis. All data were analyzed by SPSS 22.0. Results Twelve weeks of treatment with ZGZTF could significantly decrease the level of ALP and BGP in serum, increase the BMD of femurs, and improve the biomechanical capability of vertebral body in maximum loading and elastic modulus. Concerning histomorphology, we found ordered arrangement of trabeculae, slightly thinning of trabeculae and none obvious slight fractures in femurs after 12 weeks of treatment with ZGZTF. The expression of LRP5,β-catenin, Runx2 and Osx involved in the canonical Wnt/β-catenin signaling pathway was significantly up-regulated in the presence of ZGZTF,and the expression of SOST in this pathway was down-regulated. Conclusions These results suggest that ZGZTF may be antiosteoporosis by down-regulating SOST protein to promote Wnt/β-catenin signaling pathway.
基金Supported by the National Natural Science Foundation of China under Grant Nos 91233111,61274041,11275228,61006004 and 61076001the National Basic Research Program of China(No 2012CB619305)the National High-Technology R&D Program of China(No 2011AA03A101).
文摘By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane In_(x)𝑦Ga_(1−x)𝑦N thin films grown on r-sapphire substrates by metalorganic chemical vapour deposition.The results of the inplane grazing incidence diffraction technique are analyzed and compared with a complementary out-of-plane high resolution x-ray diffraction technique.When the indium composition is low,the a-plane In_(x)𝑦Ga_(1−x)𝑦N layer is tensile strain in the growth direction(𝑏a-axis)and compressive strain in the two in-plane directions(𝑛a-axis and𝑑a-axis).The strain status becomes contrary when the indium composition is high.The stress in the𝑛a-axis direction𝜏σyy is larger than that in the a-axis directionσzz.Furthermore,strain in the two in-plane directions decrease and the crystal quality becomes better with the growing of the In_(x)Ga_(1−z)N film.
基金Supported by the National Science Foundation of China under Grant Nos 61006004,60976008 and 10979507the National Basic Research Program of China under Grant No A000091109-05the National High-Technology R&D Program of China under Grant No 2011AA03A101.
文摘Semi-polar ZnO (1011) epitaxial films are demonstrated using a methanol oxidant by metalorganic chemical vapor deposition on Si (111) substrates at 500℃.X-ray (O) scanning indicates that there are six kinds of in-plane domain growths,with the ZnO [1012] parallel to the Si (11(2)〉 direction families.The crystallographic orientation of ZnO is supposed to be caused by surface passivation.The methanol,as a polar molecule,may be adsorbed on the Si (111) surface to form a passivation layer,which inhibits the (0001) ZnO plane deposition on the substrate surface,and as a result the ZnO (1011) plane becomes preferred.The optical properties,examined by a roomtemperature photoluminescence spectrum,exhibit a strong near-band-edge emission peak at 379nm,indicating that the (1011) ZnO film has good crystal quality.These results are significant for research into and for the applications of semi-polar ZnO films.
基金Supported by the National Science Foundation of China under Grant Nos 60976008,61006004,61076001 and 10979507the National Basic Research Program of China under Grant No A000091109-05the National High-Technology R&D Program of China under Grant No 2011AA03A101.
文摘The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on rsapphire is studied.The influences of Ⅴ/Ⅲ ratio and growth temperature on surface morphology are investigated.Ⅴ-pits and stripes are observed on the surface of a-GaN grown at 1050 ℃ and 1100℃,respectively.The overall orientation and geometry of Ⅴ-pits are uniform and independent on the Ⅴ/Ⅲ molar ratio in the samples grown at 1050 ℃,while in the samples grown at 1100 ℃,the areas of stripes decrease with the adding of Ⅴ/Ⅲ ratio.We deduce the origin of Ⅴ-pits and stripes by annealing the buffer layers at different temperatures.Because of the existence of inclined (10(-1)1) facets,Ⅴ-pits are formed at 1050℃.The (10(-1)1) plane is an N terminated surface,which is metastable at higher temperature,so stripes instead of V-pits are observed at 1100℃.Raman spectra suggest that the growth temperature of the first layer in the two-step process greatly affects the strain of the films.Hence,to improve the growth temperature of the first layer in the two-step method may be an effective way to obtain high quality a-GaN film on r-sapphire.
基金Supported by the National Natural Science Foundation of China under Grant No.60086001the Special Funds for the Major State Basic Research Project of China under Grant No.G20000683.
文摘High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapour phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976008,61006004,61076001,10979507the Special Funds for Major State Basic Research Project(973 program)of China(No A000091109-05)the National High-Technology R&D Program of China(No 2011AA03A101).
文摘The non-polar a-plane(1120)In_(x)Ga_(1−x)N alloys with different indium compositions(0.074≤x≤0.555)were grown on r-plane(1012)sapphire substrates by metalorganic chemical vapor deposition,and the indium compositions x are estimated from x-ray diffraction measurements.The in-plane orientation of the In_(x)Ga_(1−x)N with respect to the r-plane substrate is confirmed to be[1100]sapphire||[1120]In_(x)Ga_(1−x)N and[1101]sapphire||[0001]In_(x)Ga_(1−x)N.The effects of substrate temperature,reactor pressure and trimethylindium input flow on the indium incorporation and growth rate are investigated.The morphology of the a-plane In_(x)Ga_(1−x)N is found to be significantly improved with the decreasing indium composition x and growth rate.Moreover,the in-plane anisotropic structural characteristics are revealed by high resolution x-ray diffraction employing azimuthal dependence,and the degree of anisotropy decreases with the increase of indium composition.
文摘目的 Y染色体性别决定区域相关高迁移率族盒21基因(sex-determining regio of Y chromosome related high-mobility-group box 21,SOX21)在结直肠癌组织中发生异常甲基化,然而该基因在结肠癌粪便标本中是否发生异常甲基化及其意义尚不清楚。本研究检测组织和粪便标本中SOX21基因启动子区甲基化水平,旨在评估甲基化的SOX21基因作为结直肠癌粪便基因检测标志物价值。方法选取2014-05-20-2015-02-26中山大学附属第六医院胃肠外科收治的105例结直肠癌患者的癌与癌旁正常组织,分别组成结直肠癌组和癌旁正常组。以及2014-04-03-2016-10-10收治的240例患者粪便标本,其中结直肠癌80例为结直肠癌组,腺瘤77例为腺癌组,正常83例为正常组。采用定量甲基化特异性聚合酶链式反应(quantitative methylation specific polymerase chain reaction,qMSP)技术检测SOX21基因甲基化水平,计算敏感性、特异性和ROC曲线下面积,并分析SOX21基因甲基化与结直肠癌患者临床病理特征之间关系。结果组织标本结果显示,肿瘤组织SOX21基因甲基化水平高于其对应癌旁组织,Z=8.679,P<0.001;当甲基化的SOX21特异性为97.1%(102/105)时,结直肠癌检出率为84.8%(89/105);ROC曲线下面积为0.930,95%CI为0.889～0.971;SOX21甲基化与年龄、性别、部位、TNM分期、肿瘤大小和分化程度无关联,均P>0.05。粪便标本结果显示,结直肠癌组和腺瘤组SOX21甲基化水平高于正常组,P<0.05。当甲基化的SOX21特异性为97.6%(81/83)时,对结直肠癌敏感性为80.0%(64/80),对腺瘤敏感性为33.8%(26/77);SOX21检测结直肠癌的ROC曲线下面积为0.926,95%CI为0.885～0.968,检测腺瘤的ROC曲线下面积为0.667,95%CI为0.583～0.751;SOX21基因对肿瘤检出率与肿瘤近、远端发生位置有关联,远端肿瘤检出率高,χ2=17.372,P<0.001,但与年龄、性别、TNM分期、肿瘤大小和分化程度无关联,P>0.05。结论在结直肠癌组织和粪便标本中,SOX21基因启动子区均发生异常高甲基化。甲基化的SOX21基因是结直肠癌粪便基因检测的潜在良好标志物。
