A transient analysis of Te doped GaSb melt growth process is performed using finite element method.The solute concentration at the growth interface increases with time because of k<1.The growth interface shape beco...A transient analysis of Te doped GaSb melt growth process is performed using finite element method.The solute concentration at the growth interface increases with time because of k<1.The growth interface shape becomes a little flat at the beginning of the growth compared with the initial shape.Radial segregation occurs even under theμg condition.This segregation increases with the increase of gravity when gravity is small,and reaches a maximum at g=10^(-3)for our system.展开更多
基金Supported by the Climbing Project of the National Ministry of Science and Technology(95-Yu-34)and the Foundation of National Ministry of Education.
文摘A transient analysis of Te doped GaSb melt growth process is performed using finite element method.The solute concentration at the growth interface increases with time because of k<1.The growth interface shape becomes a little flat at the beginning of the growth compared with the initial shape.Radial segregation occurs even under theμg condition.This segregation increases with the increase of gravity when gravity is small,and reaches a maximum at g=10^(-3)for our system.
