为充分利用地表数据、小尺度考虑时空变异性评价地下水的可持续性,提出基于人为开采响应的地下水可持续性指标(artificial mining response-based groundwater sustainability index,AGSI),采用熵权TOPSIS(technique for order preferen...为充分利用地表数据、小尺度考虑时空变异性评价地下水的可持续性,提出基于人为开采响应的地下水可持续性指标(artificial mining response-based groundwater sustainability index,AGSI),采用熵权TOPSIS(technique for order preferenceby similarity to ideal solution)法确定地下水人为开采程度,并通过分解系数将人为开采对地下水系统施加的压力分解至各监测井,进而与地下水响应状态关联。以大安市为研究区,使用Mann-Kendall检验法和Sen′s slope变化趋势分析法验证评价结果的准确性。结果表明:2008—2017年研究区地下水可持续性受到破坏的风险由潜水向承压水转移,而各含水层间、层内的地下水可持续性分布差异表明调控地下水开采布局是大安市未来地下水管理工作的重点;研究区地下水可持续性演变过程可被水位趋势分析结果验证,AGSI法强调了人工开采的作用效果,有助于更好地理解人类活动与地下水资源的相互作用过程,为评估地下水可持续性提供新思路。展开更多
4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity m...4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature. The fabricated 4 μm-spacing device showed a very low dark current (0.25 pA at 5 V bias voltage), a typical responsivity of 0.103 A/W at 20 V, and a peak re-sponse wavelength at 290 nm. The fabricated devices held a high DUV to visible re-jection ratio of >103.展开更多
文摘为充分利用地表数据、小尺度考虑时空变异性评价地下水的可持续性,提出基于人为开采响应的地下水可持续性指标(artificial mining response-based groundwater sustainability index,AGSI),采用熵权TOPSIS(technique for order preferenceby similarity to ideal solution)法确定地下水人为开采程度,并通过分解系数将人为开采对地下水系统施加的压力分解至各监测井,进而与地下水响应状态关联。以大安市为研究区,使用Mann-Kendall检验法和Sen′s slope变化趋势分析法验证评价结果的准确性。结果表明:2008—2017年研究区地下水可持续性受到破坏的风险由潜水向承压水转移,而各含水层间、层内的地下水可持续性分布差异表明调控地下水开采布局是大安市未来地下水管理工作的重点;研究区地下水可持续性演变过程可被水位趋势分析结果验证,AGSI法强调了人工开采的作用效果,有助于更好地理解人类活动与地下水资源的相互作用过程,为评估地下水可持续性提供新思路。
文摘4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature. The fabricated 4 μm-spacing device showed a very low dark current (0.25 pA at 5 V bias voltage), a typical responsivity of 0.103 A/W at 20 V, and a peak re-sponse wavelength at 290 nm. The fabricated devices held a high DUV to visible re-jection ratio of >103.