An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode ar...An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode array consists of five emitter stripes which share common electrodes on one laser chip.The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width.The laser diode array emits at the wavelength of 409 nm,which is located in the blue-violet region,and the threshold current is 2.9 A.The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.展开更多
An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor depositio...An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition.The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated.It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer,ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.展开更多
We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm)metal scheme,where the Pt layer is in...We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm)metal scheme,where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface.It is shown that unlike the conventional Ti/A1/Ti/Au contacts,the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10^(-4)Ω.cm^(2) even after annealing at 350℃.X-ray diffraction(XRD)measurements by synchrotron radiation and Auger electron spectroscopy(AES)examination are performed to understand the effects of heat treatment.展开更多
基金Supported by the National Natural Science Foundation of China for Distinguished Young Scholars under Grant No 60925017the National Natural Science Foundation of China under Grant Nos 61223005,10990100,60836003 and 61176126Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-Discipline Foundation.
文摘An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated.The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition.The laser diode array consists of five emitter stripes which share common electrodes on one laser chip.The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10 kHz frequency and 100 ns pulse width.The laser diode array emits at the wavelength of 409 nm,which is located in the blue-violet region,and the threshold current is 2.9 A.The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A.
基金Supported by the National Science Fund for Distinguished Young Scholars(No 60925017)the National Natural Science Foundation of China(Nos 10990100,60836003 and 60976045)Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-Discipline Foundation.
文摘An InGaN/GaN p-i-n solar cell inserted with a 5-nm low-temperature(LT)GaN interlayer between the p-GaN cap layer and the InGaN i-layer is grown on a c-plane sapphire substrate by metal organic chemical vapor deposition.The effects of the LT GaN interlayer on the performance of the InGaN/GaN solar cells are investigated.It is found that the LT-GaN interlayer prevents the extension of threading dislocations from the InGaN layer to the p-GaN layer and improves the crystal quality of both the p-GaN cap layer and the InGaN i-layer,ultimately leading to an increasing external quantum efficiency and photocurrent density of the InGaN/GaN solar cells.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60506001,60976045,60836003,60776047 and 61076119the National Basic Research Program(2007CB936700)the National Science Foundation for Distinguished Young Scholar under Grant No 60925017.
文摘We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm)metal scheme,where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN surface.It is shown that unlike the conventional Ti/A1/Ti/Au contacts,the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10^(-4)Ω.cm^(2) even after annealing at 350℃.X-ray diffraction(XRD)measurements by synchrotron radiation and Auger electron spectroscopy(AES)examination are performed to understand the effects of heat treatment.
