Perovskite/Silicon Tandem Solar Cells: From Detailed Balance Limit Calculations to Photon Management

Energy conversion efficiency losses and limits of perovskite/silicon tandem solar cells are investigated by detailed balance calculations and photon management.An extended Shockley-Queisser model is used to identify fundamental loss mechanisms and link the losses to the optics of solar cells.Photon management is used to minimize losses and maximize the energy conversion efficiency.The influence of photon management on the solar cell parameters of a perovskite single-junction solar cell and a perovskite/silicon solar cell is discussed in greater details.An optimized solar cell design of a perovskite/silicon tandem solar cell is presented,which allows for the realization of solar cells with energy conversion efficiencies exceeding 32%.

On-chip integrated GeSe_(2)/Si vdW heterojunction for ultravioletenhanced broadband photodetection,imaging,and secure optical communication

Broadband photodetection,spanning from ultraviolet(UV)to infrared(IR),is pivotal in diverse technological domains including astronomy,remote sensing,environmental monitoring,and medical diagnostics.However,current commercially available broadband photodetectors,predominately based on conventional narrow-bandgap semiconductors,exhibit limited sensitivity in the UV region.This limitation,stemming from the significant energy disparity between the semiconductor bandgap and UV photon,narrows their application scope.Herein,we report an innovative approach involving the in-situ van der Waals(vdW)integration of two-dimensional(2D)GeSe_(2)layers onto a Si substrate.This process yields a high-quality GeSe_(2)/Si vdW heterojunction device,which features a broad response range covering from UV to near-IR(NIR)with a greatly-enhanced sensitivity in the UV region.The device possesses high responsivities of 325 and 533.4 mA/W,large detectivities of 1.24×10^(13)and 2.57×10^(13)Jones,and fast response speeds of 20.6/82.1 and 17.7/81.0μs under 360 and 980 nm,respectively.Notably,the broadband image sensing and secure invisible optical communication capabilities of the GeSe_(2)/Si heterojunction device are demonstrated.Our work provides a viable approach for UV-enhanced broadband photodetection technology,opening up new possibilities and applications across various scientific and technological domains.

In situ construction of PtSe_(2)/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging

Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advantages,including van der Waals(vdW)stacking,gapless electronic structure,and Van Hove singularities in the electronic density of states.However,challenges such as large-scale patterning,poor photoresponsivity,and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing.Here,we demonstrate the in situ fabrication of PtSe_(2)/Ge Schottky junction by directly depositing 2D PtSe_(2) films with a vertical layer structure on a Ge substrate with an ultrathin AlOx layer.Due to high quality junction,the photodetector features a broadband response of up to 4.6μm,along with a high specific detectivity of�1012 Jones,and operates with remarkable stability in ambient conditions as well.Moreover,the highly integrated device arrays based on PtSe_(2)/AlOx/Ge Schottky junction showcases excellent Mid-IR(MIR)imaging capability at room temperature.These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.

In-situ fabrication of vertical heterogeneous nickel diselenide-molybdenum diselenide architectures as bifunctional overall water-splitting electrocatalyst

Despite the rapid advances in electrocatalysts based on two-dimensional(2D)transition metal dichalco-genides(TMDs)materials,they are subject to serious aggregation,poor conductivity and the presence of inactive basal planes.Herein,we have successfully demonstrated the in-situ construction of NiSe_(2)-MoSe_(2) heterostructure arrays on carbon cloth(NiSe_(2)-MoSe_(2)/CC)by a facile two-step hydrothermal process.The presence of the synergistic effect in the heterostructures effectively optimizes the poor conductivity and hydrophilicity,and thus enables fast electron transfer,leading to enhanced electrochemical reaction.Fur-thermore,density functional theory calculations reveal that the electrons redistribution at the heterojunc-tion interface and the reduced Gibbs free energy of hydrogen adsorption for hydrogen evolution reaction(HER)/the Gibbs free energy change value of rate-determining step for oxygen evolution reaction(OER),thus enhancing the HER/OER catalytic activity.Importantly,the device displays a good performance with a low overpotential of 98 and 310 mV for HER and OER,respectively,and a low cell voltage of 1.59 V for its corresponding electrolyzer(10 mA cm^(-2)).This work presents the high-performance water splitting of bifunctional electrocatalysts based on 2D TMDs materials and offers a novel design concept of interface engineering.

In-situ fabrication of on-chip 1T'-MoTe_(2)/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing

High-sensitivity room-temperature multi-dimensional infrared(IR)detection is crucial for military and civilian purposes.Recently,the gapless electronic structures and unique optoelectrical properties have made the two-dimensional(2D)topological semimetals promising candidates for the realization of multifunctional optoelectronic devices.Here,we demonstrated the in-situ construction of high-performance 1T’-MoTe_(2)/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer.The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron,an ultrafast response time of~160 ns,and a large specific detectivity of over 109 Jones in mid-infrared(MIR)range surpasses that of most 2D materials-based IR sensors,approaching the performance of commercial IR photodiodes.The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature.All these outstanding detection features have enabled the demonstration of position-sensitive detection applications.It demonstrates an exceptional position sensitivity of 14.9 mV/mm,an outstanding nonlinearity of 6.44%,and commendable trajectory tracking and optoelectronic demodulation capabilities.This study not only offers a promising route towards room-temperature MIR optoelectronic applications,but also demonstrates a great potential for application in optical sensing systems.

In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

The research of ultraviolet photodetectors(UV PDs)have been attracting extensive attention,due to their important applications in many areas.In this study,PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional(2D)PtSe2 film on n-GaN substrate.The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage.Further analysis reveals that a high responsivity of 193 mA·W^-1,an ultrahigh specific detectivity of 3.8 × 10^14 Jones,linear dynamic range of 155d B and current on/off ratio of^10^8,as well as fast response speeds of 45/102μs were obtained at zero bias voltage.Moreover,this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns.Such high-performanee PtSe2/GaN heteroj u nction UV PD demonstrated in this work is far superior to previously reported results,suggesting that it has great potential for deep UV detection.

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe_(2)/β-Ga_(2)O_(3)2D/3D Schottky junction with ultrafast speed

There is an emerging need for high-sensitivity solar-blind deep ultraviolet(DUV)photodetectors with an ultra-fast response speed.Although nanoscale devices based on Ga_(2)O_(3)nanostructures have been developed,their practical applications are greatly limited by their slow response speed as well as low specific detectivity.Here,the successful fabrication of two-/three-dimensional(2D/3D)graphene(Gr)/PtSe2/β-Ga_(2)O_(3)Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is demonstrated.Benefitting from the high-quality 2D/3D Schottky junction,the vertically stacked structure,and the superior-quality transparent graphene electrode for effective carrier collection,the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W,a large on/off current ratio of~105,along with an ultra-high ultraviolet(UV)/visible rejection ratio of 1.8×104.More importantly,it has an ultra-fast response time of 12µs and a remarkable specific detectivity of~1013 Jones.Finally,an excellent DUV imaging capability has been identified based on the Gr/PtSe2/β-Ga_(2)O_(3)Schottky junction photodetector,demonstrating its great potential application in DUV imaging systems.

Phase-controlled van der Waals growth of wafer-scale 2D MoTe_(2) layers for integrated high-sensitivity broadband infrared photodetection

Being capable of sensing broadband infrared(IR)light is vitally important for wide-ranging applications from fundamental science to industrial purposes.Two-dimensional(2D)topological semimetals are being extensively explored for broadband IR detection due to their gapless electronic structure and the linear energy dispersion relation.However,the low charge separation efficiency,high noise level,and on-chip integration difficulty of these semimetals significantly hinder their further technological applications.Here,we demonstrate a facile thermal-assisted tellurization route for the van der Waals(vdW)growth of wafer-scale phase-controlled 2D MoTe_(2)layers.Importantly,the type-ⅡWeyl semimetal 1T'-MoTe_(2)features a unique orthorhombic lattice structure with a broken inversion symmetry,which ensures efficient carrier transportation and thus reduces the carrier recombination.This characteristic is a key merit for the well-designed 1T'-MoTe_(2)/Si vertical Schottky junction photodetector to achieve excellent performance with an ultrabroadband detection range of up to 10.6μm and a large room temperature specific detectivity of over 108 Jones in the mid-infrared(MIR)range.Moreover,the large-area synthesis of 2D MoTe_(2)layers enables the demonstration of high-resolution uncooled MIR imaging capability by using an integrated device array.This work provides a new approach to assembling uncooled IR photodetectors based on 2D materials.

Vertically standing PtSe_2 film: a saturable absorber for a passively mode-locked Nd:LuVO_4 laser

The novel vertically standing Pt Se2 film on transparent quartz was prepared by selenization of platinum film deposited by the magnetron sputtering method, and an Nd:Lu VO4 passively mode-locked solid-state laser was realized by using the fabricated Pt Se2 film as a saturable absorber. The X-ray diffraction pattern and Raman spectrum of the film indicate its good crystallinity with a layered structure. The thickness of Pt Se2 film is measured to be 24 nm according to the cross-section height profile of the atomic force microscope image. Highresolution transmission electron microscopy images clearly demonstrate its vertically standing structure with an interlayer distance of 0.54 nm along the c-axis direction. The modulation depth(ΔT) and saturation fluence(Φs)of Pt Se2 film are measured to be 12.6% and 17.1 μJ∕cm2, respectively. The obtained mode-locked laser spectrum has a central wavelength of 1066.573 nm, with a 3 d B bandwidth of 0.106 nm. The transform limited pulse width of the mode-locked laser was calculated to be 15.8 ps. A maximum average output power of 180 m W with a working repetition rate of 61.3 MHz is obtained. To the best of our knowledge, this is the first report of the generation of ultrafast mode-locked laser pulses by using layered Pt Se2 as a saturable absorber.

Van der Waals integration inch-scale 2D MoSe_(2) layers on Si for highly-sensitive broadband photodetection and imaging

As one of the most promising materials for two-dimensional transition metal chalcogenides(2D TMDs),molybdenum diselenide(MoSe_(2))has great potential in photodetectors due to its excellent properties like tunable bandgap,high carrier mobility,and excellent air stability.Although 2D MoSe_(2)-based photodetectors have been reported to exhibit admired performance,the large-area 2D MoSe_(2)layers are difficult to be achieved via conventional synthesis methods,which severely impedes its future applications.Here,we present the controllable growth of large-area 2D MoSe_(2)layers over 3.5-inch with excellent homogeneity by a simple post-selenization route.Further,a high-quality n-MoSe_(2)/p-Si van der Waals(vdW)heterojunction device is in-situ fabricated by directly growing 2D n-MoSe_(2)layers on the patterned p-Si substrate,which shows a self-driven broadband photoresponse ranging from ultraviolet to mid-wave infrared with an impressive responsivity of 720.5 mA·W^(−1),a high specific detectivity of 10^(13) Jones,and a fast response time to follow nanosecond pulsed optical signal.In addition,thanks to the inch-level 2D MoSe_(2)layers,a 4×4 integrated heterojunction device array is achieved,which has demonstrated good uniformity and satisfying imaging capability.The large-area 2D MoSe_(2)layer and its heterojunction device array have great promise for high-performance photodetection and imaging applications in integrated optoelectronic systems.

Light trapping enhanced broadband photodetection and imaging based on MoSe_(2)/pyramid Si vdW heterojunction

Two-dimensional(2D)layered materials have been considered promising candidates for next-generation optoelectronics.However,the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology.Notably,2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics.In this work,we present the patterned assembly of MoSe_(2)/pyramid Si mixed-dimensional van der Waals(vdW)heterojunction arrays for broadband photodetection and imaging.Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction,the photodetector demonstrates a wide spectral response range from 265 to 1550 nm,large responsivity up to 0.67 A·W^(-1),high specific detectivity of 1.84×10^(13)Jones,and ultrafast response time of 0.34/5.6μs at 0 V.Moreover,the photodetector array exhibits outstanding broadband image sensing capability.This study offers a novel development route for high-performance and broadband photodetector array by MoSe_(2)/pyramid Si mixed-dimensional heterojunction.