An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscil...An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected.Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers.An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300℃ as verified by the experiment.展开更多
Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge...Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge_(x)/Si structure,the switch current and insertion loss at wavelength 1.3 fiin are 36 mA and 2.8 dB,respectively.The switching response time is 40 ns.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69476008the Key Project of the State Commission of Science and Technology of China.
文摘An Sb delta doping layer in silicon is grown at the temperature of 300℃ by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam.The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected.Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers.An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300℃ as verified by the experiment.
基金Supported by the National Natural Science Foundation of China.
文摘Based on plasma dispersion of Si_(1-x)Ge_(x),the single mode waveguide modulators consisting of Si_(1-x)Ge_(x)/Si and Si/Si_(1-x)Ge_(x)/Si which were grown by molecular beam epitaxy have been fabricated.For Si_(1-x)Ge_(x)/Si structure,the switch current and insertion loss at wavelength 1.3 fiin are 36 mA and 2.8 dB,respectively.The switching response time is 40 ns.
