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Si_(1-x)Ge_(x)/Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy
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作者 GAO Yong LIU Enke +4 位作者 LI Guozheng LIU Xiding ZHANG Xiangjiu lu xuekun WANG Xun 《Chinese Physics Letters》 SCIE CAS CSCD 1994年第12期734-736,共3页
Si_(1-x)Ge_(x)/Si single-mode rib waveguides with 0.5dB/cm losses have been fabricated,in which the SiGe layers are grown by molecular beam epitaxy.The single-mode waveguide dimensions determined experimentally are co... Si_(1-x)Ge_(x)/Si single-mode rib waveguides with 0.5dB/cm losses have been fabricated,in which the SiGe layers are grown by molecular beam epitaxy.The single-mode waveguide dimensions determined experimentally are consistent with the single-mode theory of SiGe waveguides. 展开更多
关键词 waveguide SIGE EPITAXY
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