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Magnetoresistance in FeSi/Cu Compositionally Modulated Films
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作者 luan kaizheng LIU Yihua MA Xiaoding 《Chinese Physics Letters》 SCIE CAS CSCD 1992年第4期209-212,共4页
FeSi/Cu compositionally modulated amorphous films with different thicknesses of Cu layers have been obtained by radio-frequency sputtering.We studied the resistivity and magnetoresistance of these samples at room temp... FeSi/Cu compositionally modulated amorphous films with different thicknesses of Cu layers have been obtained by radio-frequency sputtering.We studied the resistivity and magnetoresistance of these samples at room temperature.The resistivity of FeSi/Cu compositionally modulated films(CMFs)increases with decreasing the thickness of Cu layers.The FeSi/Cu CMFs show a negative magnetoresistance effect.The magnetoresistance decreases with decreasing the Cu layer thickness dc when dc is over 20A,but it turns to increase with decreasing dc when dc is below 20A.This is probably caused by the polarization of conductive electrons of Cu. 展开更多
关键词 TEMPERATURE RESISTANCE EFFECT
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