We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al_(0.35) Ga_(0.65)As/GaAs(50/40/100Å)asymmetric coupled-doubl...We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al_(0.35) Ga_(0.65)As/GaAs(50/40/100Å)asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra.The minimum level splitting is about 2.5meV.展开更多
文摘We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al_(0.35) Ga_(0.65)As/GaAs(50/40/100Å)asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra.The minimum level splitting is about 2.5meV.