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Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors
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作者 DEZHONG CAO XIAOKUN YANG +4 位作者 luyang shen CHONGCHONG ZHAO CAINA LUAN JIN MA HONGDI XIAO 《Photonics Research》 SCIE EI 2018年第12期1144-1150,共7页
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-... Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter. 展开更多
关键词 Distributed Bragg reflectors (DBRs) InGaN-based LIGHT-EMITTING diodes (LEDs) HIGHLY REFLECTIVE NANOPOROUS GAN mirrors
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