To improve the corrosion resistance of titanium(Ti)bipolar plate,titanium nitride(TiN)film was prepared on the surface of commercial TA1 pure titanium by magnetron reactive sputtering and pulse laser deposition(PLD)te...To improve the corrosion resistance of titanium(Ti)bipolar plate,titanium nitride(TiN)film was prepared on the surface of commercial TA1 pure titanium by magnetron reactive sputtering and pulse laser deposition(PLD)techniques,and the film prepared under different process parameters were evaluated.Results show that dense and complete TiN film can be obtained on TA1 surface under different preparation processes,and the corrosion current density of Ti substrate significantly increases.However,the composition of the film prepared by magnetron reactive sputtering is affected by the oxygen competition reaction,and its homogeneity is inferior to that of the film prepared by PLD.The comprehensive performance of the PLD-prepared film shows excellent characteristics in the terms of low corrosion current density(0.025μA·cm^(−2)),moderate corrosion overpotential(−0.106 V),and good hydrophobicity.展开更多
基金National Key Research and Development Program of China(2022YFB4002100)。
文摘To improve the corrosion resistance of titanium(Ti)bipolar plate,titanium nitride(TiN)film was prepared on the surface of commercial TA1 pure titanium by magnetron reactive sputtering and pulse laser deposition(PLD)techniques,and the film prepared under different process parameters were evaluated.Results show that dense and complete TiN film can be obtained on TA1 surface under different preparation processes,and the corrosion current density of Ti substrate significantly increases.However,the composition of the film prepared by magnetron reactive sputtering is affected by the oxygen competition reaction,and its homogeneity is inferior to that of the film prepared by PLD.The comprehensive performance of the PLD-prepared film shows excellent characteristics in the terms of low corrosion current density(0.025μA·cm^(−2)),moderate corrosion overpotential(−0.106 V),and good hydrophobicity.
