It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional(2D)materials.The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostr...It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional(2D)materials.The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures(2DHs)based broadband photodetectors in the far-infrared(IR)and middle-IR regions with high response and high detectivity.This review focuses on the strategy and motivation of designing 2DHs based high-performance IR photodetectors,which provides a wide view of this field and new expectation for advanced photodetectors.First,the photocarriers'generation mechanism and frequently employed device structures are presented.Then,the 2DHs are divided into semimetal/semiconductor 2DHs,semiconductor/semiconductor 2DHs,and multidimensional semi-2DHs;the advantages,motivation,mechanism,recent progress,and outlook are discussed.Finally,the challenges for next-generation photodetectors are described for this rapidly developing field.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.51722204,91421110,51802145)the National Key Basic Research Program of China(Grant No.2014CB931702)+3 种基金the Sichuan Provincial Fund for Distinguished Young Academic and Technology Leaders(Grant No.2014JQ0011)the Science and Technology Support Program of Sichuan Province(Grant No.2018RZ0042,2016RZ0033,2018RZ0082)the Natural Science Foundation of Guangdong Province(2018A030310225)China Postdoctoral Science Foundation(Grant No.2018M643443).
文摘It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional(2D)materials.The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures(2DHs)based broadband photodetectors in the far-infrared(IR)and middle-IR regions with high response and high detectivity.This review focuses on the strategy and motivation of designing 2DHs based high-performance IR photodetectors,which provides a wide view of this field and new expectation for advanced photodetectors.First,the photocarriers'generation mechanism and frequently employed device structures are presented.Then,the 2DHs are divided into semimetal/semiconductor 2DHs,semiconductor/semiconductor 2DHs,and multidimensional semi-2DHs;the advantages,motivation,mechanism,recent progress,and outlook are discussed.Finally,the challenges for next-generation photodetectors are described for this rapidly developing field.
