Results in Sizing and Simulation of PV Applications Based on Different Solar Cell Technologies

Modeling and simulation of photovoltaic (PV) systems represents an essential task for the integration of PV panels in current power applications. At the present time, there are sizing tools of photovoltaic systems available on the market, taking into account the proposed energy consumption, site localization and system cost. An advanced specialized program (PVSyst) was considered. The sizing and simulations of two PV important applications were developed using PV modules based on three different technologies: monocrystalline and polycrystalline silicon, as well as CIS. Our results showed how different types of solar cell technologies influenced the final power output and performances for a PV LED lighting, as well as for a PV water pumping system, in terms of overall yield, efficiency and system availability.

Optical Analysis of a ZnO/Cu_(2)O Subcell in a Silicon-Based Tandem Heterojunction Solar Cell

Research on silicon-based tandem heterojunction solar cells (STHSC) incorporating metal oxides is one of the main directions for development of high-efficiency solar cells. In this work, the optical characteristics of a STHSC consisting of a ZnO/Cu2O subcell on top of a silicon-based subcell were studied by optical modelling. Cu2O is a direct-gap p-type semiconductor which is attractive for application in solar cells due to its high absorptance of ultra-violet and visible light, nontoxicity, and low-cost producibility. Highly Al-doped ZnO and undoped Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. Thermal annealing of the Cu2O layer at 900°C enhances the electrical properties and reduces optical absorption, presumably as a result of increased grain size. Hall effect measurements show that the majority carrier (hole) mobility increases from 10 to 50 cm2/V×s and the resistivity decreases from 560 to 200 Ω×cm after annealing. A Cu2O absorber layer of 2 μm thickness will generate about 10 mA/cm2 of photocurrent under AM1.5G illumination. The optical analysis of the STHSC involved calculating the spectral curves for absorptance, transmittance, and reflectance for different thicknesses of the thin film layers constituting the ZnO/Cu2O subcell. The complex refractive indices of the thin films were derived from spectroscopic ellipsometry measurements and implemented in the simulation model. The lowest reflectance and highest transmittance for the ZnO/Cu2O subcell are obtained for a thickness of approximately 80 nm for both the top and bottom AZO layers. The SiNx anti-reflection coating for the c-Si bottom subcell must be optimized to accommodate the shift of the photon spectrum towards longer wavelengths. By increasing the thickness of the SiNx layer from 80 nm to 120 nm, the total reflectance for the STHSC device is reduced from 12.7% to 9.7%.

Numerical Analysis of an Industrial Polycrystalline Silicon Photovoltaic Module Based on the Single-Diode Model Using Lambert W Function

It is adopted the single-diode solar cell model and extended for a PV module. The current vs. voltage (I-V) characteristic based on the Lambert W-function was used. The estimation parameters for the simulation approach of the photovoltaic (PV) module make use of Levenberg-Marquardt method. It was considered an industrial polycrystalline silicon photovoltaic (PV) module and the simulated results were compared with the experimental ones extracted from a specific datasheet. The I-V characteristic for the analysed PV module and its maximum output power are investigated for different operating conditions of incident solar radiation flux and temperature, as well as parameters related to the solar cells material and technology (series resistance, shunt resistance and gamma factor). The analysis gives indications and limitations for design and optimization of the performance for industrial PV modules. This study can be implemented in any type of PV module.