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A Comparative Study of Epi-up and Epi-Down Bonding of High Power 980 nm Single-Mode Semiconductor Lasers
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作者 Martin Hai Hu lawrence c hughes +2 位作者 Hong Ky Nguyen catherine G. caneau chung-En Zah 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期319-320,共2页
Epi-up and epi-down bonding of high power 980nm lasers have been studied in terms of bonding process, thermal behavior, optical performances, thermal stress effects and long-term laser reliability. We demonstrated tha... Epi-up and epi-down bonding of high power 980nm lasers have been studied in terms of bonding process, thermal behavior, optical performances, thermal stress effects and long-term laser reliability. We demonstrated that epi-down bonding can offer lower thermal resistance and improved optical performances without significantly degrading the long-term laser reliability. 展开更多
关键词 down in of A Comparative Study of Epi-up and Epi-Down Bonding of High Power 980 nm Single-Mode Semiconductor Lasers NM for that mode
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