Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

Graphene quantum dots(GQDs)doped InGaO(IGO)thin film transistors(TFTs)have been fabricated based on solution-driven ZrO_(x) as gate dielectrics.Compare to pure IGO TFTs,superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration.It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of0.3 mg·ml^(-1)have the optimized performances,including field-effect mobility(μ_(FE))of 22.02 cm^(2)·V^(-1)·s^(-1),on/off current ratio(I_(on)/I_(off))of 7.06×10^(7),subthreshold swing(SS)of 0.09 V·dec^(-1),hysteresis of 0.04 V and interfacial trap states(D_(it))of 1.03×10^(12)cm^(-2).In addition,bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs.The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress(PBS)test and negative bias stress(NBS)test for 3600 s,respectively.And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s,respectively.Meanwhile,it showed smaller threshold voltage shift of0.20 and 0.22 V for green light under PBS and NBS test for3600 s,respectively.It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress(PBIS)test and negative bias illumination stress(NBIS)test for 3600 s,respectively.Lowfrequency noise(LFN)characteristics of GQDs-IGO/ZrO_(x)TFTs indicated that the noise source came from the fluctuations in mobility.Finally,a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO_(x)TFT,demonstrating good dynamic response behavior and a maximum gain of 7.4.These experimental results have suggested that solution-processed GQDs-IGO/ZrO_(x)TFT may envision potential applications in low-cost and large-area electronics.