Semiconductor nanowire field-effect transistors represent a promising platform for the development of roomtemperature(RT)terahertz(THz)frequency light detectors due to the strong nonlinearity of their transfer charact...Semiconductor nanowire field-effect transistors represent a promising platform for the development of roomtemperature(RT)terahertz(THz)frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers(<1 nW Hz^(−1/2))and high responsivities(>100 V/W).Nano-engineering an NW photodetector combining high sensitivity with high speed(subns)in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics,but this requires a clear understanding of the origin of the photo-response.Conventional electrical and optical measurements,however,cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated.Here,we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution(35 nm)THz photocurrent nanoscopy.By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy(s-SNOM)and monitoring both electrical and optical readouts,we simultaneously measure transport and scattering properties.The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping,therefore providing a route to engineer photo-responses by design.展开更多
基金supported by the European Research Council through the ERC Consolidator Grant(681379)SPRINTby the European Union through the H2020-MSCA-ITN-2017+2 种基金TeraApps(765426)grantpartially by the SUPERTOP project of the QuantERA ERA-NET Cofund in Quantum Technologies and by the FET-OPEN projectpartial support from the second half of the Balzan Prize 2016 in applied photonics delivered to Federico Capasso.
文摘Semiconductor nanowire field-effect transistors represent a promising platform for the development of roomtemperature(RT)terahertz(THz)frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers(<1 nW Hz^(−1/2))and high responsivities(>100 V/W).Nano-engineering an NW photodetector combining high sensitivity with high speed(subns)in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics,but this requires a clear understanding of the origin of the photo-response.Conventional electrical and optical measurements,however,cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated.Here,we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution(35 nm)THz photocurrent nanoscopy.By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy(s-SNOM)and monitoring both electrical and optical readouts,we simultaneously measure transport and scattering properties.The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric and bolometric currents whose interplay is discussed as a function of photon density and material doping,therefore providing a route to engineer photo-responses by design.