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Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes
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作者 Dmitry G. Kvashnin Peter Vancso +4 位作者 Liubov Yu. antipina Geza I. Mark Laszlo P. Biro Pavel B. Sorokin leonid a. chernozatonskii 《Nano Research》 SCIE EI CAS CSCD 2015年第4期1250-1258,共9页
We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagona... We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphene layers with formation of a hollow carbon nanostructure sheet which displays a wide range of electronic properties (from semiconductor to metallic), depending on the size of the holes and the distance between them. The results were additionally supported by wave packet dynamical transport calculations based on the numerical solution of the time-dependent Schr/Sdinger equation. 展开更多
关键词 gaphene ANTIDOTS electronic properties DFT
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