Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr_(2)IrO_(4). It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0....Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr_(2)IrO_(4). It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.3 in Sr_(2-x)Pb_(x)IrO_(4). The mapping data obtained from energy-dispersive x-ray spectroscopy analyses give solid evidence that the Pb ions are uniformly distributed in the Sr_(2)IrO_(4) matrix. The incorporation of Pb leads to a moderate depression of the canted antiferromagnetic ordering state. The electrical conductivity could be greatly enhanced when the Pb doping content is higher than x=0.2.The present results give a fresh material base to explore new physics in doped Sr_(2)IrO_(4) systems.展开更多
The continuing demand for new optoelectronic devices drives researchers to seek new materials suitable for photodetector applications.Recently,ternary compound semiconductors have entered researchers’field of vision,...The continuing demand for new optoelectronic devices drives researchers to seek new materials suitable for photodetector applications.Recently,ternary compound semiconductors have entered researchers’field of vision,among which chalcohalides have attracted special interest because of their rich properties and unique crystal structure consisting of atom chains and inter-chain van der Waals gaps.We have synthesized high-quality BiSeI single crystals with[110]-plane orientation and fabricated a photodetector.The optoelectronic measurements show a pronounced photocurrent signal with outstanding technical parameters,namely high responsivity(3.2 A/W),specific detectivity(7×10^(10) Jones)and external quantum efficiency(622%)for λ=635 nm,V_(ds)=0.1 V and P_(opt)=0.23 mW/cm^(2).The high performance of BiSeI photodetector and its layer structure make it a promising candidate for low-dimensional optoelectronic applications.展开更多
The electronic and superconducting properties of Fe_(1-δ)Se single-crystal flakes grown hydrothermally are studied by the transport measurements under zero and high magnetic fields up to 38.5 T.The results contrast s...The electronic and superconducting properties of Fe_(1-δ)Se single-crystal flakes grown hydrothermally are studied by the transport measurements under zero and high magnetic fields up to 38.5 T.The results contrast sharply with those previously reported for nematically ordered Fe Se by chemical-vapor-transport(CVT)growth.No signature of the electronic nematicity,but an evident metal-to-nonmetal crossover with increasing temperature,is detected in the normal state of the present hydrothermal samples.Interestingly,a higher superconducting critical temperature T_c of 13.2 K is observed compared to a suppressed T_c of 9 K in the presence of the nematicity in the CVT Fe Se.Moreover,the upper critical field in the zero-temperature limit is found to be isotropic with respect to the field direction and to reach a higher value of-42 T,which breaks the Pauli limit by a factor of 1.8.展开更多
Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight differen...Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.展开更多
High-quality epitaxial LaRhO3(LRO) thin films on SrTiO3(110) single-crystalline substrates are fabricated by pulsed laser deposition and their photoconductivity properties are studied. The transient photoconductivity(...High-quality epitaxial LaRhO3(LRO) thin films on SrTiO3(110) single-crystalline substrates are fabricated by pulsed laser deposition and their photoconductivity properties are studied. The transient photoconductivity(TPC) effect is found in this semiconductor LRO film at room temperature. The magnitude of TPC increases almost linearly with the laser power intensities and the photon energies in visible light range. Moreover, the difference in the TPC results under two airflow conditions confirms that both intrinsic photoinduced carrier accumulation and extrinsic photoinduced heating effects contribute to the magnitude of TPC effect.展开更多
Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photorespo...Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.展开更多
The interaction between complex magnetic structures and non-trivial band structures in ternary rare-earth GdCr_(6)Ge_(6) induces exotic and abundant electro-magnetic phenomena.In this work,we perform a systematical in...The interaction between complex magnetic structures and non-trivial band structures in ternary rare-earth GdCr_(6)Ge_(6) induces exotic and abundant electro-magnetic phenomena.In this work,we perform a systematical investigation on critical behaviors and magnetic properties of the single-crystal GdCr_(6)Ge_(6).The temperature,field,and angle dependence of magnetization unveils strong magnetic anisotropy along the c-axis and isotropic characteristic in the ab-plane.Critical exponentsβ=0.252(1),γ=0.905(9),δ=4.606(3)for H//ab,andβ=0.281(3),γ=0.991(8),δ=4.541(5)for H//c are obtained by the modified Arrott plot method(MAP)and critical isotherm(CI)analysis.The determined exponents for both directions are consistent with the theoretical prediction of a tricritical mean-field model.Based on detailed magnetization measurements and universality scaling,comprehensive magnetic phase diagrams of GdCr6Ge6for H//ab and H//c are constructed,which reveal that the external field induces a ferromagnetic(FM)transition for H//ab while a ferrimagnetic(FIM)one for H//c.Two tricritical points are determined for H//ab(11.2 K,266.3 Oe)and H//c(11.3 K,3.3 kOe)on the phase diagrams,respectively.The field-induced anisotropic magnetic configurations and multiple phases are clarified,where the moments of Gd and Cr form FM coupling for H//ab while FIM one for H//c via the interaction between Gd and Cr sublattices.展开更多
The single crystalline nanostructure of organic semiconductors provides a very promising class of materials for applications in modern optoelectronic devices. However, morphology control and optoelectronic property mo...The single crystalline nanostructure of organic semiconductors provides a very promising class of materials for applications in modern optoelectronic devices. However, morphology control and optoelectronic property modulation of high quality single crystalline samples remain a challenge. Here, we report the morphology-controlled growth of single crystalline nanorod arrays of perylene- 3,4,9,10-tetracarboxylic dianhydride (IrFCDA). We demonstrate that, unlike FTCDA film, PTCDA nanorods exhibits optical waveguide features, enhanced absorption, and Frenkel excitation emission in the visible region. Additionally, we measured the electrical properties of PTCDA nanorods, including the conductivity along the growth direction of the nanorod, which is roughly 0.61 S-m i (much higher than that of pure crystalline PTCDA films).展开更多
基金Project supported by the National Key R&D Program of China (Grant Nos.2022YFA1403203 and 2021YFA1600201)the National Natural Science Foundation of China (Grant Nos.11974356 and 12274414)+1 种基金the Joint Funds of the National Natural Science Foundation of Chinathe Chinese Academy of Sciences Large-Scale Scientific Facility (Grant No.U1932216)。
文摘Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr_(2)IrO_(4). It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.3 in Sr_(2-x)Pb_(x)IrO_(4). The mapping data obtained from energy-dispersive x-ray spectroscopy analyses give solid evidence that the Pb ions are uniformly distributed in the Sr_(2)IrO_(4) matrix. The incorporation of Pb leads to a moderate depression of the canted antiferromagnetic ordering state. The electrical conductivity could be greatly enhanced when the Pb doping content is higher than x=0.2.The present results give a fresh material base to explore new physics in doped Sr_(2)IrO_(4) systems.
基金Supported by the National Key Research and Development Program of China(Grant No.2016YFA0300404)the National Natural Science Foundation of China(Grant No.11874363,11974356,and U1932216)the Collaborative Innovation Program of Hefei Science Center,CAS(Grant No.2019HSC-CIP002)。
文摘The continuing demand for new optoelectronic devices drives researchers to seek new materials suitable for photodetector applications.Recently,ternary compound semiconductors have entered researchers’field of vision,among which chalcohalides have attracted special interest because of their rich properties and unique crystal structure consisting of atom chains and inter-chain van der Waals gaps.We have synthesized high-quality BiSeI single crystals with[110]-plane orientation and fabricated a photodetector.The optoelectronic measurements show a pronounced photocurrent signal with outstanding technical parameters,namely high responsivity(3.2 A/W),specific detectivity(7×10^(10) Jones)and external quantum efficiency(622%)for λ=635 nm,V_(ds)=0.1 V and P_(opt)=0.23 mW/cm^(2).The high performance of BiSeI photodetector and its layer structure make it a promising candidate for low-dimensional optoelectronic applications.
基金Supported by the National Key Research and Development Program of China (Grant Nos.2016YFA0300300 and 2017YFA0303003)the National Natural Science Foundation of China (Grant Nos.12061131005,11834016 and 11888101)+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No.XDB25000000)the Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant Nos.QYZDY-SSW-SLH001)。
文摘The electronic and superconducting properties of Fe_(1-δ)Se single-crystal flakes grown hydrothermally are studied by the transport measurements under zero and high magnetic fields up to 38.5 T.The results contrast sharply with those previously reported for nematically ordered Fe Se by chemical-vapor-transport(CVT)growth.No signature of the electronic nematicity,but an evident metal-to-nonmetal crossover with increasing temperature,is detected in the normal state of the present hydrothermal samples.Interestingly,a higher superconducting critical temperature T_c of 13.2 K is observed compared to a suppressed T_c of 9 K in the presence of the nematicity in the CVT Fe Se.Moreover,the upper critical field in the zero-temperature limit is found to be isotropic with respect to the field direction and to reach a higher value of-42 T,which breaks the Pauli limit by a factor of 1.8.
基金Supported by the National Key R&D Program of China under Grant Nos 2016YFA0300404 and 2017YFA0403600the National Natural Science Foundation of China under Grant Nos 51603207,U1532267,11574288 and 11674327the Natural Science Foundation of Anhui Province under Grant No 1708085MA08
文摘Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
基金Supported by the National Key R&D Program of China under Grant Nos 2017YFA0303603 and 2016YFA0401803the National Natural Science Foundation of China under Grant Nos 11574316,U1532155,61805256 and U1832106the Key Research Program of Frontier Sciences of CAS under Grant No QYZDB-SSW-SLH011
文摘High-quality epitaxial LaRhO3(LRO) thin films on SrTiO3(110) single-crystalline substrates are fabricated by pulsed laser deposition and their photoconductivity properties are studied. The transient photoconductivity(TPC) effect is found in this semiconductor LRO film at room temperature. The magnitude of TPC increases almost linearly with the laser power intensities and the photon energies in visible light range. Moreover, the difference in the TPC results under two airflow conditions confirms that both intrinsic photoinduced carrier accumulation and extrinsic photoinduced heating effects contribute to the magnitude of TPC effect.
基金Supported by the National Key Research and Development Program of China (Grant Nos.2017YFA0403600 and 2016YFA0300404)the National Natural Science Foundation of China (Grant Nos.11874363,11974356 and U1932216)the Collaborative Innovation Program of Hefei Science Center,CAS (Grant No.2019HSC-CIP002)。
文摘Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronics, which demand plentiful functional properties in mechanics, transport, magnetism and photoresponse.For electronic devices, not only metals and high-performance semiconductors but also insulators and dielectric materials are highly desirable. Layered structures composed of 2D materials of different properties can be delicately designed as various useful heterojunction or homojunction devices, in which the designs on the same material(namely homojunction) are of special interest because preparation techniques can be greatly simplified and atomically seamless interfaces can be achieved. We demonstrate that the insulating pristine ZnPS_3, a ternary transition-metal phosphorus trichalcogenide, can be transformed into a highly conductive metal and an n-type semiconductor by intercalating Co and Cu atoms, respectively. The field-effect-transistor(FET) devices are prepared via an ultraviolet exposure lithography technique. The Co-ZnPS_3 device exhibits an electrical conductivity of 8 × 10^(4) S/m, which is comparable to the conductivity of graphene. The Cu-ZnPS_3 FET reveals a current ON/OFF ratio of 1-05 and a mobility of 3 × 10^(-2 )cm^(2)·V^(-1)·s^(-1). The realization of an insulator, a typical semiconductor and a metallic state in the same 2D material provides an opportunity to fabricate n-metal homojunctions and other in-plane electronic functional devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.12074386,11874358,U1432138,11974181,12204006,and 12250410238)the Collaborative Innovation Program of Hefei Science Center,CAS(Grant No.2021HSC-CIP006)+3 种基金the Alliance of International Science Organizations(Grant No.ANSO-VF-2022-03)the Key Project of Natural Scientific Research of Universities in Anhui Province(Grant No.K120462009)the Anhui Provincial Natural Science Foundation(Grant No.2108085QA21)supported by the High Magnetic Field Laboratory of Anhui Province。
文摘The interaction between complex magnetic structures and non-trivial band structures in ternary rare-earth GdCr_(6)Ge_(6) induces exotic and abundant electro-magnetic phenomena.In this work,we perform a systematical investigation on critical behaviors and magnetic properties of the single-crystal GdCr_(6)Ge_(6).The temperature,field,and angle dependence of magnetization unveils strong magnetic anisotropy along the c-axis and isotropic characteristic in the ab-plane.Critical exponentsβ=0.252(1),γ=0.905(9),δ=4.606(3)for H//ab,andβ=0.281(3),γ=0.991(8),δ=4.541(5)for H//c are obtained by the modified Arrott plot method(MAP)and critical isotherm(CI)analysis.The determined exponents for both directions are consistent with the theoretical prediction of a tricritical mean-field model.Based on detailed magnetization measurements and universality scaling,comprehensive magnetic phase diagrams of GdCr6Ge6for H//ab and H//c are constructed,which reveal that the external field induces a ferromagnetic(FM)transition for H//ab while a ferrimagnetic(FIM)one for H//c.Two tricritical points are determined for H//ab(11.2 K,266.3 Oe)and H//c(11.3 K,3.3 kOe)on the phase diagrams,respectively.The field-induced anisotropic magnetic configurations and multiple phases are clarified,where the moments of Gd and Cr form FM coupling for H//ab while FIM one for H//c via the interaction between Gd and Cr sublattices.
文摘The single crystalline nanostructure of organic semiconductors provides a very promising class of materials for applications in modern optoelectronic devices. However, morphology control and optoelectronic property modulation of high quality single crystalline samples remain a challenge. Here, we report the morphology-controlled growth of single crystalline nanorod arrays of perylene- 3,4,9,10-tetracarboxylic dianhydride (IrFCDA). We demonstrate that, unlike FTCDA film, PTCDA nanorods exhibits optical waveguide features, enhanced absorption, and Frenkel excitation emission in the visible region. Additionally, we measured the electrical properties of PTCDA nanorods, including the conductivity along the growth direction of the nanorod, which is roughly 0.61 S-m i (much higher than that of pure crystalline PTCDA films).