Unipolar resistive switching behaviors of the ZnO and ALO/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-ann...Unipolar resistive switching behaviors of the ZnO and ALO/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. Xray diffraction results indicated that ZnO film has a dominant peak at(002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of ALO/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmic’s behaviors. The endurance of the bilayer(BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.展开更多
基金supported by the National Key Research and Development Program of China under Grant No.2016YFB0700201the National Natural Science Foundation of China under Grant No.51372030
文摘Unipolar resistive switching behaviors of the ZnO and ALO/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. Xray diffraction results indicated that ZnO film has a dominant peak at(002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of ALO/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmic’s behaviors. The endurance of the bilayer(BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.
