The valence band offset between Cs_(2)AgBiBr_(6)and hole transport layer(HTL)is approximately 1.00 e V,which results in high energy loss and is identified as one of the bottle necks of Cs_(2)Ag BiBr_(6)perovskite sola...The valence band offset between Cs_(2)AgBiBr_(6)and hole transport layer(HTL)is approximately 1.00 e V,which results in high energy loss and is identified as one of the bottle necks of Cs_(2)Ag BiBr_(6)perovskite solar cell(PSC)for achieving high power conversion efficiency(PCE).To tackle this problem,we propose the optimization of the energy level alignment by designing and synthesizing novel deep-level hole transport materials(HTMs).The sole introduction of deep-level HTMs successfully reduces the valence band offset between Cs_(2)Ag Bi Br_(6)and HTL,but induces the increased valence band offset at HTL/Au interface,limiting the PCE improvement.To further solve the problem and improve the PCE,the gradient energy level arrangement is constructed by combining the newly developed deep-level HTM 6,6’-(3-((9,9-dimethyl-9H-fluoren-3-yl)(4-methoxyphenyl)amino)thiophene-2,5-diyl)bis(N-(9,9-dimethyl-9H-fluoren-2-yl)-N,9-bis(4-methoxyphenyl)-9H-carbazol-3-amine)(TF)with 2,2’,7,7’-tetrakis(N,N’-dipmethoxyphenylamine)-9,9-spirobifluorene(Spiro-OMeTAD).Through optimization,an impressive PCE of 3.50%with remarkably high open-circuit voltage(V_(oc))and fill factor(FF)is achieved,qualifying it among the best pristine Cs_(2)AgBiBr_(6)PSCs.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 52174099, 51904333)the Natural Science Foundation of Hunan Province, China (No. 2021JJ30842)
基金financially supported by the National Natural Science Foundation of China(Nos.22179053,22279046 and 21905119)the Natural Science Excellent Youth Foundation of Jiangsu Provincial(No.BK20220112)+1 种基金the Open Competition Mechanism Project of Carbon Neutrality of Jiangsu Province(No.BE2022026)Zhejiang Province Selected Funding for Postdoctoral Research Projects(No.ZJ2021001)for financial support。
文摘The valence band offset between Cs_(2)AgBiBr_(6)and hole transport layer(HTL)is approximately 1.00 e V,which results in high energy loss and is identified as one of the bottle necks of Cs_(2)Ag BiBr_(6)perovskite solar cell(PSC)for achieving high power conversion efficiency(PCE).To tackle this problem,we propose the optimization of the energy level alignment by designing and synthesizing novel deep-level hole transport materials(HTMs).The sole introduction of deep-level HTMs successfully reduces the valence band offset between Cs_(2)Ag Bi Br_(6)and HTL,but induces the increased valence band offset at HTL/Au interface,limiting the PCE improvement.To further solve the problem and improve the PCE,the gradient energy level arrangement is constructed by combining the newly developed deep-level HTM 6,6’-(3-((9,9-dimethyl-9H-fluoren-3-yl)(4-methoxyphenyl)amino)thiophene-2,5-diyl)bis(N-(9,9-dimethyl-9H-fluoren-2-yl)-N,9-bis(4-methoxyphenyl)-9H-carbazol-3-amine)(TF)with 2,2’,7,7’-tetrakis(N,N’-dipmethoxyphenylamine)-9,9-spirobifluorene(Spiro-OMeTAD).Through optimization,an impressive PCE of 3.50%with remarkably high open-circuit voltage(V_(oc))and fill factor(FF)is achieved,qualifying it among the best pristine Cs_(2)AgBiBr_(6)PSCs.
