Effects of interface bound states on the shot noise in normal metal–low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

We consider the effects of interface bound states on the electrical shot noise in tunnel junctions formed between normal metals and one-dimensional(1 D) or two-dimensional(2 D) Rashba semiconductors with proximity-induced s-wave pairing potential. We investigate how the shot noise properties vary as the interface bound state is evolved from a non-zero energy bound state to a zero-energy bound state. We show that in both 1 D and 2 D tunnel junctions, the ratio of the noise power to the charge current in the vicinity of zero bias voltage may be enhanced significantly due to the induction of the midgap interface bound state. But as the interface bound state evolves from a non-zero energy bound state to a zero-energy bound state, this ratio tends to vanish completely at zero bias voltage in 1 D tunnel junctions, while in 2 D tunnel junctions it decreases smoothly to the usual classical Schottky value for the normal state. Some other important aspects of the shot noise properties in such tunnel junctions are also clarified.

Influence of Rashba spin–orbit coupling on Josephson effect in triplet superconductor/two-dimensional semiconductor/triplet superconductor junctions

We study theoretically Josephson effect in a planar ballistic junction between two triplet superconductors with pwave orbital symmetries and separated by a two-dimensional(2D)semiconductor channel with strong Rashba spin–orbit coupling.In triplet superconductors,three types of orbital symmetries are considered.We use Bogoliubov–de Gennes formalism to describe quasiparticle propagations through the junction and the supercurrents are calculated in terms of Andreev reflection coefficients.The features of the variation of the supercurrents with the change of the strength of Rashba spin–orbit coupling are investigated in some detail.It is found that for the three types of orbital symmetries considered,both the magnitudes of supercurrent and the current-phase relations can be manipulated effectively by tuning the strength of Rashba spin–orbit coupling.The interplay of Rashba spin–orbit coupling and Zeeman magnetic field on supercurrent is also investigated in some detail.

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.

Generation of adjustable pure spin currents in negative-U systems

Single-particle sequential tunneling is studied through a negative-U center hybridized with a superconducting, a ferromagnetic, and a normal metal electrodes. In stark contrast to the case of positive U, the single-particle tunneling in attractive charging energy is usually prohibited by ground states with electrons in pairs. We find a microscopic mechanism to induce single-particle sates from pair states. As a consequence, in the nonpolarized metal terminal a remarkable pure spin current with no charge currents survives over a wide range of gate- and bias- voltages, which is rather crucial for experimental observation and design of spintronic devices. In addition, a significant spin-filter effect is presented in certain bias regime.