In high voltage input DC-DC converter, auxiliary winding of isolation transformer is usually used to supply power for control circuit. Due to the wide-range of input voltage, the variable output voltage of auxiliary w...In high voltage input DC-DC converter, auxiliary winding of isolation transformer is usually used to supply power for control circuit. Due to the wide-range of input voltage, the variable output voltage of auxiliary winding will cause a series of problems, such as variable drive pulse amplitude, increased driver switching devices loss and drive transformer core saturation. This paper analyzes the influence of variable output voltage of auxiliary winding in detail. A novel method is proposed to solve the problem of large variation range of auxiliary winding output voltage, which is adding a buck converter between the auxiliary winding and the control circuit. A dual switch forward convert has been designed with 300 V - 800 V input and 24 V/5 A output. The results show that this method is effective by comparing the different results of using buck converter or not.展开更多
One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including ...One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons,nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.展开更多
文摘In high voltage input DC-DC converter, auxiliary winding of isolation transformer is usually used to supply power for control circuit. Due to the wide-range of input voltage, the variable output voltage of auxiliary winding will cause a series of problems, such as variable drive pulse amplitude, increased driver switching devices loss and drive transformer core saturation. This paper analyzes the influence of variable output voltage of auxiliary winding in detail. A novel method is proposed to solve the problem of large variation range of auxiliary winding output voltage, which is adding a buck converter between the auxiliary winding and the control circuit. A dual switch forward convert has been designed with 300 V - 800 V input and 24 V/5 A output. The results show that this method is effective by comparing the different results of using buck converter or not.
基金supported by National Natural Science Foundation of China (52275551)Shanxi Scholarship Council of China (2021-117)。
文摘One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons,nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.
