We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor.The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation ...We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor.The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as^1 V and steep subthreshold swing(83 mV/dec).The p-type conduction behavior of InSe is obtained when negative gate voltages are biased.Chemical doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride(h-BN)between InSe and the solid-ion-conductor substrate.By comparing the performance of devices with and without h-BN,the capacitance of solid ion conductors is extracted to be the same as that of^2 nm h-BN,and the mobility of InSe on solid ion conductors is comparable to that on the SiO2 substrate.Our results show that solid ion conductors provide a facile and powerful method for electrostatic doping.展开更多
Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D...Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric.Here we demonstrate an indium selenide(lnSe)/hexagonal boron nitride(hBN)/graphite heterostructure as a 2D field-effect transistor(FET),with InSe as channel material,hBN as dielectric,and graphite as gate.The fabricated FETs feature high electron mobility up to 1,146 cm2·V^-1·s^-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric.Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained.Taking advantages of the mechanical flexibility of these materials,we integrated the heterostructured InSe FET on a flexible substrate,exhibiting little modification of device performance at a high strain level of up to 2%.Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.展开更多
基金Project supported by the National Key Research and Development Projects of China(Grant Nos.2016YFA0202300 and 2018FYA0305800)the National Natural Science Foundation of China(Grant Nos.61674170 and 61888102)+1 种基金the K.C.Wong Education Foundation,the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.Y201902).
文摘We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor.The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as^1 V and steep subthreshold swing(83 mV/dec).The p-type conduction behavior of InSe is obtained when negative gate voltages are biased.Chemical doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride(h-BN)between InSe and the solid-ion-conductor substrate.By comparing the performance of devices with and without h-BN,the capacitance of solid ion conductors is extracted to be the same as that of^2 nm h-BN,and the mobility of InSe on solid ion conductors is comparable to that on the SiO2 substrate.Our results show that solid ion conductors provide a facile and powerful method for electrostatic doping.
基金Acknowledgements This work was supported by the National Key Research&Development Projects of China(Nos.2016YFA0202300,2018FYA0305800)National Natural Science Foundation of China(Nos.61674170,61888102)+2 种基金K.C.Wong Education Foundation,Strategic Priority Research Program of Chinese Academy of Sciences(Nos.XDB30000000,XDB28000000)Youth Innovation Promotion Association of CAS(No.20150005)the CAS Pioneer Hundred Talents Program.A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics.The authors gratefully acknowledge Haifang Yang,Junjie Li,and Changzi Gu for help in device fabrication,and Yu-Yang Zhang and Shixuan Du for helpful discussions.
文摘Two-dimensional(2D)materials as channel materials provide a promising alternative route for future electronics and flexible electronics,but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric.Here we demonstrate an indium selenide(lnSe)/hexagonal boron nitride(hBN)/graphite heterostructure as a 2D field-effect transistor(FET),with InSe as channel material,hBN as dielectric,and graphite as gate.The fabricated FETs feature high electron mobility up to 1,146 cm2·V^-1·s^-1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric.Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained.Taking advantages of the mechanical flexibility of these materials,we integrated the heterostructured InSe FET on a flexible substrate,exhibiting little modification of device performance at a high strain level of up to 2%.Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.
