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Reliability evaluation on sense-switch p-channel flash 被引量:4
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作者 Side Song Guozhu Liu +5 位作者 Hailiang Zhang lichao chao Jinghe Wei Wei Zhao Genshen Hong Qi He 《Journal of Semiconductors》 EI CAS CSCD 2021年第8期82-86,共5页
In this paper,the reliability of sense-switch p-channel flash is evaluated extensively.The endurance result indicates that the p-channel flash could be programmed and erased for more than 10000 cycles;the room tempera... In this paper,the reliability of sense-switch p-channel flash is evaluated extensively.The endurance result indicates that the p-channel flash could be programmed and erased for more than 10000 cycles;the room temperature read stress shows negligible influence on the p-channel flash cell;high temperature data retention at 150℃ is extrapolated to be about 5 years and 53 years corresponding to 30% and 40% degradation in the drive current,respectively.Moreover,the electrical parameters of the p-channel flash at different operation temperature are found to be less affected.All the results above indicate that the sense-switch p-channel flash is suitable to be used as the configuration cell in flash-based FPGA. 展开更多
关键词 RELIABILITY ENDURANCE data retention sense-switch p-channel flash
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