Surface acoustic wave(SAW)resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN.The impact of device parameters inc...Surface acoustic wave(SAW)resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN.The impact of device parameters including aspect ratio of length to width of resonators,number of interdigital transducers,and acoustic propagation direction on resonator performance have been studied.For the first time,we demonstrate wireless temperature sensing from 21.6 to 120℃ with a stable temperature coefficient of frequency of–24.3 ppm/℃ on bulk GaN-based SAW resonators.展开更多
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-...The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device technology.The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN gate.Device reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also discussed.Lastly,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.展开更多
基金The research is supported by the National Natural Sciences Foundation of China(Grant No.61974137)the One Hundred Person project of the Chinese Academy of Science.
文摘Surface acoustic wave(SAW)resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN.The impact of device parameters including aspect ratio of length to width of resonators,number of interdigital transducers,and acoustic propagation direction on resonator performance have been studied.For the first time,we demonstrate wireless temperature sensing from 21.6 to 120℃ with a stable temperature coefficient of frequency of–24.3 ppm/℃ on bulk GaN-based SAW resonators.
基金This work was supported by the National Natural Science Foundation of China(Grants No.62174174,61775230,61804162,61874131,62074158,U1601210,61874114,61922001,11634002,61521004,and 61927806)Guangdong Province Key-Area Research and Development Program(Grants No.2019B010130001,2019B090917005,2019B090904002,2019B090909004,2020B010174003,and 2020B010174004)+1 种基金the National Key Research and Development Program of China(Grants No.2016YFB0400100 and 2017YFB0402800)the Science Challenge Project(Grant No.TZ2018003).
文摘The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device technology.The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN gate.Device reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also discussed.Lastly,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.
