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Dual-wavelength ultraviolet photodetector based on vertical(Al,Ga)N nanowires and graphene 被引量:1
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作者 Min Zhou Yukun Zhao +6 位作者 lifeng bian Jianya Zhang Wenxian Yang Yuanyuan Wu Zhiwei Xing Min Jiang Shulong Lu 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第7期641-645,共5页
Due to the wide application of UV-A(320 nm–400 nm)and UV-C(200 nm–280 nm)photodetectors,dual-wavelength(UV-A/UV-C)photodetectors are promising for future markets.A dual-wavelength UV photodetector based on vertical(... Due to the wide application of UV-A(320 nm–400 nm)and UV-C(200 nm–280 nm)photodetectors,dual-wavelength(UV-A/UV-C)photodetectors are promising for future markets.A dual-wavelength UV photodetector based on vertical(Al,Ga)N nanowires and graphene has been demonstrated successfully,in which graphene is used as a transparent electrode.Both UV-A and UV-C responses can be clearly detected by the device,and the rejection ratio(R254 nm/R450 nm)exceeds35 times at an applied bias of-2 V.The short response time of the device is less than 20 ms.Furthermore,the underlying mechanism of double ultraviolet responses has also been analyzed systematically.The dual-wavelength detections could mainly result from the appropriate ratio of the thicknesses and the enough energy band difference of(Al,Ga)N and Ga N sections. 展开更多
关键词 dual-wavelength ultraviolet photodetector (Al Ga)N nanowire GRAPHENE molecular beam epitaxy
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