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Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures
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作者 Jia-Xin Wang Xiao-Jing Li +7 位作者 Fa-Zhan Zhao Chuan-Bin Zeng Duo-Li Li lin-chun gao Jiang-Jiang Li Bo Li Zheng-Sheng Han Jia-Jun Luo 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第7期613-618,共6页
Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are investigated.The studied ESD protecting devices are the H-gate NMOS t... Trigger characteristics of electrostatic discharge(ESD)protecting devices operating under various ambient temperatures ranging from 30℃to 195℃are investigated.The studied ESD protecting devices are the H-gate NMOS transistors fabricated with a 0.18-μm partially depleted silicon-on-insulator(PDSOI)technology.The measurements are conducted by using a transmission line pulse(TLP)test system.The different temperature-dependent trigger characteristics of groundedgate(GGNMOS)mode and the gate-triggered(GTNMOS)mode are analyzed in detail.The underlying physical mechanisms related to the effect of temperature on the first breakdown voltage V_(T1)investigated through the assist of technology computer-aided design(TCAD)simulation. 展开更多
关键词 ESD trigger voltage TEMPERATURE GGNMOS GTNMOS TCAD
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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process
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作者 李逸帆 倪涛 +13 位作者 李晓静 王娟娟 高林春 卜建辉 李多力 蔡小五 许立达 李雪勤 王润坚 曾传滨 李博 赵发展 罗家俊 韩郑生 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期522-529,共8页
Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response an... Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this work.It is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves shown.We establish the effective thermal transient response model with stage superposition corresponding to the heating process.The systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second stage.In the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of workload.As the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed. 展开更多
关键词 self-heating effect(SHE) silicon-on-insulator(SOI)MOSFETs thermal transient response WORKLOAD
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