In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaA...In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.展开更多
To enhance device performance and reduce fabrication cost,a series of electron transporting material(ETM)-free perovskite solar cells(PSCs)is developed by TCAD Atlas.The accuracy of the physical mode of PSCs is verifi...To enhance device performance and reduce fabrication cost,a series of electron transporting material(ETM)-free perovskite solar cells(PSCs)is developed by TCAD Atlas.The accuracy of the physical mode of PSCs is verified,due to the simulations of PEDOT:PSS-CH_(3)NH_(3)PbI_(3)-PCBM and CuSCN-CH_(3)NH_(3)PbI_(3)-PCBM p-i-n PSCs showing a good agreement with experimental results.Different hole transporting materials(HTMs)are selected and directly combined with n-CH_(3)NH_(3)PbI_(3),and the CuSCN-CH_(3)NH_(3)PbI_(3) is the best in these ETM-free PSCs.To further study the CuSCN-CH_(3)NH_(3)PbI_(3) PSC,the influences of back electrode material,gradient band gap,thickness,doping concentration,and bulk defect density on the performance are investigated.Energy band and distribution of electric field are utilized to optimize the design.As a result,the efficiency of CuSCN-CH_(3)NH_(3)PbI_(3) PSC is achieved to be 26.64%.This study provides the guideline for designing and improving the performances of ETM-free PSCs.展开更多
In this study,we report the fabrication of a sensitive deep ultraviolet(DUV)photodetector by using CsPbBr_(3) nanosheets synthesized through confined-space growth at room temperature.The peak pho-toresponse of the dev...In this study,we report the fabrication of a sensitive deep ultraviolet(DUV)photodetector by using CsPbBr_(3) nanosheets synthesized through confined-space growth at room temperature.The peak pho-toresponse of the device upon illumination blueshifts with decreasing thickness and a 68 nm CsPbBr_(3) nanosheet based device displays a peak response to 265 nm illumination,showing responsivity and spe-cific detectivity of 85 mA/W and 4.05×1011 Jones at 3 V bias,respectively.Theoretical simulation re-veals that the blueshift is associated with the wavelength-dependent absorption coefficient of CsPbBr_(3) nanosheet:incident light with shorter wavelengths can be absorbed on the superficial surface,while long-wavelength light has a larger penetration depth,leading to dominant DUV absorption in thinner CsPbBr_(3) nanosheet.This work will shed light on the facile and cost-effective fabrication of DUV photode-tectors from non-ultrawide bandgap(UWBG)all-inorganic perovskite materials.展开更多
We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can al...We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W (-85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 10^20 cm.Hz1/2.W^-1 and 6.6 × 10^5, respectively. It is found that the presence of the trapping states at the p-ZnS NWITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developiphigh-performance optoelectronic devices in the future.展开更多
Highly ordered perovskite nanowire(PNW)arrays are important building blocks for potential application in integrated optoelectronic devices due to their unique properties.Herein,a recordable digital versatile disk-assi...Highly ordered perovskite nanowire(PNW)arrays are important building blocks for potential application in integrated optoelectronic devices due to their unique properties.Herein,a recordable digital versatile disk-assisted nanochannel-confined growth(NCG)strategy was developed for large-scale growth of different kinds of PNW arrays with preferentially crystallographic orientation on various substrates.Photodetector constructed from MAPb I3 NW arrays exhibits prominent photoresponse properties with a responsivity of 20.56 A W^(-1) and specific detectivity of 4.73×10^(12) Jones,respectively.What is more,the photodetector can function as a polarization-sensitive photodetector due to the crystallographic orientation of the one-dimensional PNW arrays,with a polarization ratio of 2.2.The proposed NCG strategy provides a cost-efficient and effective method for the fabrication of high-quality PNW arrays with potential applications in future integrated devices and systems.展开更多
One-dimensional (1D) and two-dimensional (2D) materials, such as nanowires, graphene, and transition metal dichalcogenides (TMDs), have received emerging research study in the past ten years [1-3]. They have dem...One-dimensional (1D) and two-dimensional (2D) materials, such as nanowires, graphene, and transition metal dichalcogenides (TMDs), have received emerging research study in the past ten years [1-3]. They have demonstrated to be idea building blocks for fabricating high-performance photodetector devices owing to their unique electrical and optical properties [4-6].展开更多
基金supported by the National Natural Science Foundation of China(No.61575059,No.61675062,No.21501038)the Fundamental Research Funds for the Central Universities(No.JZ2018HGPB0275,No.JZ2018HGTA0220,and No.JZ2018HGXC0001).
文摘In this study,we have developed a high-sensitivity,near-infrared photodetector based on PdSe2/GaAs heterojunction,which was made by transferring a multilayered PdSe2 film onto a planar GaAs.The as-fabricated PdSe2/GaAs heterojunction device exhibited obvious photovoltaic behavior to 808 nm illumination,indicating that the near-infrared photodetector can be used as a self-driven device without external power supply.Further device analysis showed that the hybrid heterojunction exhibited a high on/off ratio of 1.16×10^5 measured at 808 nm under zero bias voltage.The responsivity and specific detectivity of photodetector were estimated to be 171.34 mA/W and 2.36×10^11 Jones,respectively.Moreover,the device showed excellent stability and reliable repeatability.After 2 months,the photoelectric characteristics of the near-infrared photodetector hardly degrade in air,attributable to the good stability of the PdSe2.Finally,the PdSe2/GaAs-based heterojunction device can also function as a near-infrared light sensor.
基金the Fundamental Research Funds for the Central Universities of China(Grant No.JD2020JGPY0010)the China Post-Doctoral Science Foundation(Grant No.2020M671834).
文摘To enhance device performance and reduce fabrication cost,a series of electron transporting material(ETM)-free perovskite solar cells(PSCs)is developed by TCAD Atlas.The accuracy of the physical mode of PSCs is verified,due to the simulations of PEDOT:PSS-CH_(3)NH_(3)PbI_(3)-PCBM and CuSCN-CH_(3)NH_(3)PbI_(3)-PCBM p-i-n PSCs showing a good agreement with experimental results.Different hole transporting materials(HTMs)are selected and directly combined with n-CH_(3)NH_(3)PbI_(3),and the CuSCN-CH_(3)NH_(3)PbI_(3) is the best in these ETM-free PSCs.To further study the CuSCN-CH_(3)NH_(3)PbI_(3) PSC,the influences of back electrode material,gradient band gap,thickness,doping concentration,and bulk defect density on the performance are investigated.Energy band and distribution of electric field are utilized to optimize the design.As a result,the efficiency of CuSCN-CH_(3)NH_(3)PbI_(3) PSC is achieved to be 26.64%.This study provides the guideline for designing and improving the performances of ETM-free PSCs.
基金the National Natural Science Foundation of China(No.62074048)the Key Research and Development Plan of Anhui Province(No.2022f04020007)+1 种基金the Natural Science Foundation of Anhui Province(No.2208085MF177)the Fundamental Research Funds for the Central Universities(No.PA2020GDKC0014).
文摘In this study,we report the fabrication of a sensitive deep ultraviolet(DUV)photodetector by using CsPbBr_(3) nanosheets synthesized through confined-space growth at room temperature.The peak pho-toresponse of the device upon illumination blueshifts with decreasing thickness and a 68 nm CsPbBr_(3) nanosheet based device displays a peak response to 265 nm illumination,showing responsivity and spe-cific detectivity of 85 mA/W and 4.05×1011 Jones at 3 V bias,respectively.Theoretical simulation re-veals that the blueshift is associated with the wavelength-dependent absorption coefficient of CsPbBr_(3) nanosheet:incident light with shorter wavelengths can be absorbed on the superficial surface,while long-wavelength light has a larger penetration depth,leading to dominant DUV absorption in thinner CsPbBr_(3) nanosheet.This work will shed light on the facile and cost-effective fabrication of DUV photode-tectors from non-ultrawide bandgap(UWBG)all-inorganic perovskite materials.
文摘We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W (-85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 10^20 cm.Hz1/2.W^-1 and 6.6 × 10^5, respectively. It is found that the presence of the trapping states at the p-ZnS NWITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developiphigh-performance optoelectronic devices in the future.
基金supported by the National Natural Science Foundation of China (NSFC, 62074048)the Fundamental Research Funds for the Central Universities (PA2020GDKC0014, JZ2020HGTB0051, and JZ2018HGXC0001)the Open Foundation of Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices (4500-411104/011)
文摘Highly ordered perovskite nanowire(PNW)arrays are important building blocks for potential application in integrated optoelectronic devices due to their unique properties.Herein,a recordable digital versatile disk-assisted nanochannel-confined growth(NCG)strategy was developed for large-scale growth of different kinds of PNW arrays with preferentially crystallographic orientation on various substrates.Photodetector constructed from MAPb I3 NW arrays exhibits prominent photoresponse properties with a responsivity of 20.56 A W^(-1) and specific detectivity of 4.73×10^(12) Jones,respectively.What is more,the photodetector can function as a polarization-sensitive photodetector due to the crystallographic orientation of the one-dimensional PNW arrays,with a polarization ratio of 2.2.The proposed NCG strategy provides a cost-efficient and effective method for the fabrication of high-quality PNW arrays with potential applications in future integrated devices and systems.
基金supported by the National Natural Science Foundation of China(Grant Nos.21501038,61575059,and 61675062)the Fundamental Research Funds for the Central Universities(Grant Nos.2012HGCX0003,2013HGCH0012,and 2014HGCH0005)the Natural Science Foundation of Anhui Province(Grant No.1408085ME90)
文摘One-dimensional (1D) and two-dimensional (2D) materials, such as nanowires, graphene, and transition metal dichalcogenides (TMDs), have received emerging research study in the past ten years [1-3]. They have demonstrated to be idea building blocks for fabricating high-performance photodetector devices owing to their unique electrical and optical properties [4-6].