High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform

Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and computing.Whereas,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI yet.Here,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength.The photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth.Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.

Systematic investigation of millimeter-wave optic modulation performance in thin-film lithium niobate

Millimeter-wave(mmWave)band(30–300 GHz)is an emerging spectrum range for wireless communication,short-range radar,and sensor applications.mmWave-optic modulators that could efficiently convert mmWave signals into the optical domain are crucial components for long-haul transmission of mmWave signals through optical networks.At these ultrahigh frequencies,however,the modulation performances are highly sensitive to the transmission line loss as well as the velocity-and impedance-matching conditions,while precise measurements and modeling of these parameters are often non-trivial.Here we present a systematic investigation of the mmWave-optic modulation performances of thin-film lithium niobate modulators through theoretical modeling,electrical verifications,and electro-optic measurements at frequencies up to 325 GHz.Based on our experimentally verified model,we demonstrate thin-film lithium niobate mmWave-optic modulators with a measured 3-dB electro-optic bandwidth of 170 GHz and a 6-dB bandwidth of 295 GHz.The device also shows a low RF half-wave voltage of 7.3 V measured at an ultrahigh modulation frequency of 250 GHz.This work provides a comprehensive guideline for the design and characterization of mmWave-optic modulators and paves the way toward future integrated mmWave photonic systems for beyond-5G communication and radar applications.

Acousto-optic modulators integrated on-chip

Acousto-optic devices that use radio frequency mechanical waves to manipulate light are critical components in many optical systems.Here,the researchers bring acousto-optic devices on-chip and make them more efficient for integrated photonic circuits.

Spectral control of nonclassical light pulses using an integrated thin-film lithium niobate modulator

Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation,communication,and networking protocols,and for bridging spectral mismatch among various quantum systems.However,quantum spectral control requires a strong nonlinearity mediated by light,microwave,or acoustics,which is challenging to realize with high efficiency,low noise,and on an integrated chip.Here,we demonstrate both frequency shifting and bandwidth compression of heralded single-photon pulses using an integrated thin-film lithium niobate(TFLN)phase modulator.We achieve record-high electro-optic frequency shearing of telecom single photons over terahertz range(±641 GHz or±5.2 nm),enabling high visibility quantum interference between frequency-nondegenerate photon pairs.We further operate the modulator as a time lens and demonstrate over eighteen-fold(6.55 nm to 0.35 nm)bandwidth compression of single photons.Our results showcase the viability and promise of on-chip quantum spectral control for scalable photonic quantum information processing.