Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination

In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.

Effect of dipole location on profile properties of symmetric surface plasmon polariton mode in Au/Al2O3/Au waveguide

This study uses a dipole embedded in A1203 layer to excite a symmetric surface plasmon polariton （SPP） mode in Au/A1203/Au waveguide to investigate its profile properties by using finite-difference time-domain （FDTD） method. The excited dipole decay radiatively direct near-field coupling to SPP mode owing to thin A1203 layer of 100 nm. The effects of electric and magnetic field intensity profiles and decay length have been considered and characterized. It is found that dipole location is an important factor to influence the horizontal and vertical profile properties of symmetric SPP mode in Au/A1203/Au waveguide. The amplitudes of electric and magnetic field intensity and the wavelengths of metal-insulatormetal （MIM） SPP resonance mode can be tuned by varying dipole location. The horizontal and vertical decay lengths are 19 and 24 nm, respectively. It is expected that the Au/A1203/Au waveguide structure is very useful for the practical applications of designing a SPP source.