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Using fluorinated and crosslinkable fullerene derivatives to improve the stability of perovskite solar cells 被引量:2
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作者 lingbo jia Lixiu Zhang +1 位作者 Liming Ding Shangfeng Yang 《Journal of Semiconductors》 EI CAS CSCD 2021年第12期1-5,共5页
Organic-inorganic hybrid perovskite solar cell(PSC)is a third-generation photovoltaic technology^([1,2]),and the certi-fied power conversion efficiency(PCE)has reached 25.5%(https://www.nrel.gov/pv/cell-efficiency.htm... Organic-inorganic hybrid perovskite solar cell(PSC)is a third-generation photovoltaic technology^([1,2]),and the certi-fied power conversion efficiency(PCE)has reached 25.5%(https://www.nrel.gov/pv/cell-efficiency.html),which can rival solar cells based on crystalline-Si and other inorganic semi-conductors.The intrinsic instability of perovskite materials could impede PSC commercialization^([3]).To date,a variety of strategies such as composition engineering,additive engi-neering,interface engineering and encapsulation technique are employed to improve the long-term stability of PSCs^([4−9]). 展开更多
关键词 PEROVSKITE stability INORGANIC
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合成新型氰基修饰的富勒烯衍生物降低介电失配实现高效反式钙钛矿太阳能电池
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作者 贾凌波 马鑫波 +10 位作者 向文灏 江小芬 丁红鹤 李行成 商研渤 朱俊发 李震宇 邱永福 陈木青 陈江照 杨上峰 《Science China Materials》 SCIE EI CAS CSCD 2023年第6期2146-2158,共13页
富勒烯衍生物,尤其是[1,1]苯基-C_(61)-丁酸-甲酯(PC_(61)BM),通常用作反式(p-i-n)钙钛矿太阳能电池(PVKSCs)的电子传输层和添加剂,但PC_(61)BM(3.8)的介电常数(ε_(r))远小于有机无机杂化铅卤钙钛矿(CH_(3)NH_(3)PbI_(3)[MAPbI_(3)]为6... 富勒烯衍生物,尤其是[1,1]苯基-C_(61)-丁酸-甲酯(PC_(61)BM),通常用作反式(p-i-n)钙钛矿太阳能电池(PVKSCs)的电子传输层和添加剂,但PC_(61)BM(3.8)的介电常数(ε_(r))远小于有机无机杂化铅卤钙钛矿(CH_(3)NH_(3)PbI_(3)[MAPbI_(3)]为6.5)的介电常数,不利于激子的解离且阻碍了界面电荷的传输.本文中,我们合成了一种新的氰基功能化富勒烯,其中两个氰基通过罗丹宁连接到富勒烯上(缩写为C_(60)-Rhd-CN),并通过反溶剂法将其引入MAPbI_(3)活性层中来构建反式钙钛矿太阳能电池器件.引入强吸电子氰基后,C_(60)-Rhd-CN的ε_(r)值达到5.1,明显高于PC_(61)BM(3.8),因此可以有效降低MAPbI_(3)钙钛矿和富勒烯电子传输层之间的介电失配.此外,氰基能够与MAPbI_(3)钙钛矿中的Pb^(2+)离子进行配位实现钙钛矿的缺陷钝化.最终,C_(60)-Rhd-CN掺入钙钛矿后促进了激子解离和界面电荷传输,并抑制了非辐射复合,使反式钙钛矿太阳能电池器件的能量转换效率从参比器件的18.43%显著提高到20.81%.此外,掺入C_(60)-Rhd-CN有助于提高钙钛矿太阳能电池的环境和热稳定性.为了阐明氰基在增加ε_(r)值和提高效率方面的关键作用,我们还合成了另一种类似结构的新型罗丹宁官能化富勒烯,其中两个氰基被硫原子取代(缩写为C_(60)-Rhd-S),其获得的能量转换效率为19.45%,其性能低于含有C_(60)-Rhd-CN添加剂的钙钛矿太阳能电池的主要原因是其ε_(r)值(4.0)较低. 展开更多
关键词 钙钛矿太阳能电池 能量转换效率 富勒烯衍生物 介电常数 电子传输层 非辐射复合 失配 硫原子
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Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer
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作者 Yanbo Shang Pu Wang +7 位作者 lingbo jia Xingcheng Li Weitao Lian Peisen Qian Muqing Chen Tao Chen Yalin Lu Shangfeng Yang 《Nano Research Energy》 2023年第3期16-24,共9页
All-inorganic CsPbI_(3-x)Br_(x)perovskite solar cells(PSCs)are advantageous in terms of high thermal stability,while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts.Defect passivat... All-inorganic CsPbI_(3-x)Br_(x)perovskite solar cells(PSCs)are advantageous in terms of high thermal stability,while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts.Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs,which are mainly based on univocal defect passivation of perovskite layer.Herein,we incorporated a bis-dimethylamino-functionalized fullerene derivative(abbreviated as PCBDMAM)as an interlayer between ZnO electron transport layer(ETL)and all-inorganic CsPbI_(2.25)Br_(0.75)perovskite layer,accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices.Upon spin-coating PCBDMAM onto ZnO ETL,the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds.In addition,PCBDMAM incorporation affords effective passivation of Pb_(I)and I_(Pb)antisite defects within the atop perovskite layer as well via coordination bonding with Pb^(2+).As a result,the regular-structure planar CsPbI_(2.25)Br_(0.75)PSC device delivers a champion power conversion efficiency(PCE)of 17.04%,which surpasses that of the control device(15.44%).Moreover,the PCBDMAM-incorporated PSC device maintains~80%of its initial PCE after 600 h heating at 85°C hot plate in N2 atmosphere,whereas PCE of the control device degrades rapidly to~62%after 460 h heating under identical conditions.Hence,PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device. 展开更多
关键词 all-inorganic perovskite solar cells fullerene derivative electron transport layer thermal stability defect passivation
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Proton-transfer-induced in situ defect passivation for highly efficient wide-bandgap inverted perovskite solar cells
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作者 Zhimin Fang lingbo jia +4 位作者 Nan Yan Xiaofen jiang Xiaodong Ren Shangfeng Yang Shengzhong(Frank)Liu 《InfoMat》 SCIE CAS 2022年第6期121-128,共8页
Wide-bandgap(≥1.68 eV)inverted perovskite solar cells(PSCs)have been recognized as promising top component cells on the commercial crystalline silicon cell to surpass its Shockley-Queisser efficiency limit.However,th... Wide-bandgap(≥1.68 eV)inverted perovskite solar cells(PSCs)have been recognized as promising top component cells on the commercial crystalline silicon cell to surpass its Shockley-Queisser efficiency limit.However,the power conversion efficiency(PCE)is dramatically limited by the huge open-circuit voltage(V_(OC))loss.Herein,we propose a proton-transfer-induced in situ defect passivation strategy to reduce the nonradiative recombination to minimize the VOC loss.Specifically,a liquid-form neutral amine,3,4,5-trifluorobenzylamine(TFBA)was added into ethyl acetate(EA)as anti-solvent for the film preparation,which induces proton-transfer from the formamidinium(FA)and methylammonium(MA)in the perovskite precursors to the TFBA.The protonated TFBA exhibits a gradient distribution near the surface of the perovskite film,achieving in situ defect passivation.As a result,TFBA-based 1.68 eV-bandgap inverted PSCs afforded a PCE of 20.39%,one of the highest for cells with this bandgap.Meanwhile,due to the strong interaction between TFBA and the perovskite film,the mixed-halide perovskites demonstrate much better photostability.Our findings offer an effective strategy to passivate defects in PSCs. 展开更多
关键词 DEFECT efficiency PASSIVATION perovskite solar cell wide-bandgap
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