Highly ordered crystallization of α-FAPbl_(3) films via homogeneous seeds for efficient perovskite solar cells

Formamidine lead triiodide(FAPbI_(3))perovskites have become the most promising photovoltaic materials for perovskite solar cells with record power conversion efficiency(PCE).However,random nucleation,phase transition,and lattice defects are still the key challenges limiting the quality of FAPbI_(3) films.Previous studies show that the introduction or adding of seeds in the precursor is effective to promote the nucleation and crystallization of perovskite films.Nevertheless,the seed-assisted approach focuses on heterogeneous seeds or hetero-composites,which inevitably induce a lattice-mismatch,the genera-tion of strain or defects,and the phase segregation in the perovskite films.Herein,we first demonstrate that high-quality perovskite films are controllably prepared using α-and δ-phases mixed FAPbI_(3) micro-crystal as the homogeneous seeds with the one-step antisolvent method.The partially dissolved seeds with suitable sizes improve the crystallinity of the perovskite flm with preferable orientation,improved carrier lifetime,and increased carrier mobility.More importantly,the α-phase-containing seeds promote the formation of α-phase FAPbI_(3) films,leading to the reduction of residual lattice strain and the suppres-sion of I-ion migration.Besides,the adding of dimethyl 2,6-pyridine dicarboxylate(DPD)into the pre-cursor further suppresses the generation of defects,contributing to the PCE of devices prepared in air ambient being significantly improved to 23.75%,among the highest PCEs for fully air-processed FAPbI_(3) solar cells.The unpackaged target devices possess a high stability,maintaining 80%of the initial PCE under simulated solar illumination exceeding 800 h.

Anisotropic etching mechanisms of 4H-SiC:Experimental and first-principles insights

Molten-alkali etching has been widely used to reveal dislocations in 4H silicon carbide(4H-SiC),which has promoted the identification and statistics of dislocation density in 4H-SiC single crystals.However,the etching mechanism of 4H-SiC is limited misunderstood.In this letter,we reveal the anisotropic etching mechanism of the Si face and C face of 4H-SiC by combining molten-KOH etching,X-ray photoelectron spectroscopy(XPS)and first-principles investigations.The activation energies for the molten-KOH etching of the C face and Si face of 4H-SiC are calculated to be 25.09 and 35.75 kcal/mol,respectively.The molten-KOH etching rate of the C face is higher than the Si face.Combining XPS analysis and first-principles calculations,we find that the molten-KOH etching of 4H-SiC is proceeded by the cycling of the oxidation of 4H-SiC by the dissolved oxygen and the removal of oxides by molten KOH.The faster etching rate of the C face is caused by the fact that the oxides on the C face are unstable,and easier to be removed with molten alkali,rather than the C face being easier to be oxidized.

Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers.In this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in 4H-SiC.In n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,respectively.In semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,respectively.The inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in 4H-SiC.More significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs.This enables to distinguish TMDs from TSDs in 4H-SiC.