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The vacancy defects and oxygen atoms occupation effects on mechanical and electronic properties of Mo_(5)Si_(3) silicides 被引量:1
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作者 Jiaying Chen Xudong Zhang +1 位作者 linmei yang Feng Wang 《Communications in Theoretical Physics》 SCIE CAS CSCD 2021年第4期121-129,共9页
Improving brittle behavior and mechanical properties is still a big challenge for high-temperature structural materials.By means of first-principles calculations,in this paper,we systematically investigate the effect ... Improving brittle behavior and mechanical properties is still a big challenge for high-temperature structural materials.By means of first-principles calculations,in this paper,we systematically investigate the effect of vacancy and oxygen occupation on the elastic properties and brittle-or-ductile behavior on Mo_(5)Si_(3).Four vacancies(Si_(-Va1),Si_(-Va2),Mo_(-Va1),Mo_(-Va2))and oxygen occupation models(O_(Mo1),O_(Mo2),O_(-Si1),O_(-Si2))are selected for research.It is found that Mo_(-Va2) vacancy has the stronger structural stability in the ground state in comparison with other vacancies.Besides,the deformation resistance and hardness of the parent Mo_(5)Si_(3) are weakened due to the introduction of different vacancy defects and oxygen occupation.The ratio of B/G indicates that oxygen atoms occupation and vacancy defects result in brittle-to-ductile transition for Mo_(5)Si_(3).These vacancies and the oxygen atoms occupation change the localized hybridization between Mo-Si and Mo-Mo atoms.The weaker O-Mo bond is a contributing factor for the excellent ductile behavior in the O_(-Si2) model for Mo_(5)Si_(3). 展开更多
关键词 vacancy defects oxygen atoms occupation mechanical properties ductile behavior electronic structure
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