Chlorine adsorption on the InP(100) surface at 300K and 150K has been studied by XPS, AES and UPS. The chlorine adsorption on InP(100) leads to a work function increase of 0.2eV and 0.45eV at RT and 150K respectively....Chlorine adsorption on the InP(100) surface at 300K and 150K has been studied by XPS, AES and UPS. The chlorine adsorption on InP(100) leads to a work function increase of 0.2eV and 0.45eV at RT and 150K respectively. The chemical driven-force induces indium segregation to the surface. The adsorbed chlorine atoms break the In-P bond and react with indium to form indium chloride.展开更多
文摘Chlorine adsorption on the InP(100) surface at 300K and 150K has been studied by XPS, AES and UPS. The chlorine adsorption on InP(100) leads to a work function increase of 0.2eV and 0.45eV at RT and 150K respectively. The chemical driven-force induces indium segregation to the surface. The adsorbed chlorine atoms break the In-P bond and react with indium to form indium chloride.
