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Fatigue-less relaxor ferroelectric thin films with high energy storage density via defect engineer 被引量:3
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作者 Baijie Song Shuanghao Wu +4 位作者 Hao Yan Kun Zhu liuxue xu Bo Shen Jiwei Zhai 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2021年第18期178-186,共9页
Thin film capacitors with excellent energy storage performances,thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry.Herein,we design and prepare lead-free0.7Sr_(0.... Thin film capacitors with excellent energy storage performances,thermal stability and fatigue endurance are strongly desired in modern electrical and electronic industry.Herein,we design and prepare lead-free0.7Sr_(0.7)Bi_(0.2)TiO_(3)-0.3BiFeO_(3)-x%Mn(x=0,0.5,1.5,2,3)thin films via sol-gel method.Mn ions of divalent valence combine with oxygen vacancies,forming defect complex,which results in marked decline in leakage current and obvious enhancement in breakdown strength.A high energy storage density~47.6 J cm^(-3)and good efficiency~65.68%are simultaneously achieved in 2%Mn doped 0.7Sr_(0.7)Bi_(0.2)TiO_(3)-0.3 BiFeO_(3)thin film capacitor.Moreover,the 2%Mn-doped thin film exhibits excellent thermal stability in wide operating temperature range(35–115℃)and strong fatigue endurance behaviors after 108 cycles.The above results demonstrate that 2%Mn-doped 0.7Sr_(0.7)Bi_(0.2)TiO_(3)-0.3 BiFeO_(3)thin film capacitor with superior energy storage performances is a potential candidate for electrostatic energy storage. 展开更多
关键词 Relaxor ferroelectric thin films Energy storage density Defect engineer
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