FeCo alloy catalysts promoting polysulfide conversion for advanced lithium-sulfur batteries

Lithium sulfur batteries(LSBs)draw extensive interest because of the ultra-high capacity and low material cost.However,the sluggish lithium polysulfides(LIPSs)conversion processes are detrimental to cycle stability and rate capability,inhibiting the commercial application of LSBs.Here we present the well-designed Fe Co alloy catalysts anchored on porous carbon(FeCo-C)as sulfur host to improve the electrochemical performance by accelerating the conversion reactions.The FeCo alloy demonstrates high catalytic effect and strong adsorption capability of LIPSs,in which potential polarization can be greatly decreased and"shuttle effects"can be largely avoided.As a result,the obtained S/Fe Co-C composites show an initial specific capacity of 791.9 m Ah g^-1 at a large current density of 2 C and maintain 502.5 mAh g^-1 even after 500 cycles.Moreover,720 m Ah g^-1(corresponding to 70%retention)can be achieved after 100 cycles at 0.2 C with a high sulfur content of 80 wt%,enabling high sulfur utilization.This work not only provides a new insight to investigate the conversion kinetics of Li PSs,but also opens up a new avenue for advanced lithium sulfur batteries.

Inhibiting oxygen vacancies and twisting NbO_(6) octahedron in erbium modified KNN-based multifunctional ceramics

It is a challenge to obtain highly tunable multifunctional performances in one ferroelectric system by a simple approach to meet the miniaturization,integration,and functionalization requirements of advanced electronic components.Herein,rare earth erbium(Er)modulated 0.9K_(0.5)Na_(0.5)NbO_(3)-0.1Sr(1-x)Er_(x)Ti_((1-x/4))O_(3),(0.9KNN-0.1ST:xEr)transparent-photoluminescent-ferroelectric energy storage multifunctional ceramics are prepared to solve this problem.The effect of lattice distortion and oxygen vacancies by Er doping on the optical and electrical properties is systematically investigated.The Er^(3+)ions can introduce a large distortion of the NbO_(6) octahedron by replacing the A-site in KNN-based ceramics.Thanks to the higher c/a ratio and lower oxygen vacancy content are simultaneously obtained in 0.9KNN-0.1ST:0.1Er ceramics.The effective energy storage density(Wrec)of 0.86 J/cm^(3),excellent near-infrared transmittance of 51.7%(1100 nm)and strong green upconversion photoluminescence are achieved in this multifunctional ceramic.This study provides a solid basis for rare earth ions doped ferroelectric ceramics with tunable multifunctional properties and has significant potential for applications in optoelectronic devices.

Flexoelectricity in oxide thin films

Flexoelectric effect describes the electromechanical coupling between the strain gradient and its internal polarization in all dielectrics.Despite this universality,the resulting flexoelectric field remains small at the macroscopic level.However,in nanosystems,the size-dependent effect of flexoelectricity becomes increasingly significant,leading to a notable flexoelectric field that can strongly influence the material’s physical properties.This review aims to explore the flexoelectric effect specifically at the nanoscale.We achieve this by examining strain gradients generated through two distinct methods:internal inhomogeneous strain and external stimulation.In addition,advanced synthesis techniques are utilized to enhance the properties and functionalities associated with flexoelectricity.Furthermore,we delve into other coupled phenomena observed in thin films,including the coupling and utilization of flexomagnetic and flexophotovoltaic effects.This review presents the latest advancements in these areas and highlights their role in driving further breakthroughs in the field of flexoelectricity.

Modulation of phase boundary and domain structures to engineer strain properties in BNT-based ferroelectrics

Bismuth sodium titanate(BNT)ceramics exhibit outstanding strain responses but are unfavorable for application in high-sensitivity displacement actuators due to the large negative strain resulting from irreversible changes in their phase transition and domain structure.Here,(1−x)Bi_(0.50)Na_(0.41)K_(0.09)TiO_(3)-xNaNbO_(3)(BNKT−xNN)solid solutions were prepared to improve the strain properties through the strategy of modulating the phase boundary and domain structures.The introduction of sodium niobate could effectively regulate the relative content of the tetragonal(P4bm)and rhombohedral(R3c)phases in the phase boundary region.The ferroelectric-to-relaxor phase transition(T_(F−R))was reduced,and the ergodic relaxor(ER)state was nurtured at room temperature.Excellent zero-negative strain properties of S=0.41%and d_(33)^(*)=742 pm/V were achieved from the reversible transition between the ER and ferroelectric states under an applied electric field(x=0.04).Additionally,understanding the domain states via piezoelectric force microscopy(PFM)and firstorder reversal curve(FORC)revealed that the superior strain responses originated from the reversible inter-transformation of substable macrodomains and polar nanoregions(PNRs)in the phase boundary.This study provides new insight into the interplay between the evolution of phase boundaries and domain structures and the strain properties of BNT-based ceramics.

Modulating low-frequency tribocatalytic performance through defects in uni-doped and bi-doped SrTiO_(3)

Triboelectrification,a process that transforms mechanical energy into electrical energy through friction,holds promise for eco-friendly wastewater treatment.This study delves into the enhancement of tribocatalytic dye degradation using SrTiO_(3),a material notable for its non-piezoelectric and centrosymmetric properties.The synthesis of uni-and bi-doped SrTiOs particles,achieved through a solid-state reaction at 100℃,results in a high-purity cubic perovskite structure.Doping with rhodium(Rh)and carbon(C)causes crystal lattice contraction,internal stress,and significant oxygen vacancies.These changes notably improve tribocatalytic efficiency under solar irradiation,with Rh-doped SrTiO_(3) demonstrating an impressive degradation rate of approximately 88% for Rhodamine B(RhB),along with reaction rate constants near 0.9 h^(-1) at 554 nm and a noticeable blueshift.This study highlights that defects introduced by doping are integral to this process,boosting catalytic activity through energy state modification and enhancing surface redox radical production.Additionally,these defects are instrumental in generating a flexoelectric field,which markedly influences the separation of electron-hole pairs under solar irradiation.Our findings illuminate the complex interplay between material composition,defect states,and environmental conditions,paving the way for advanced strategies in environmental remediation through optimized tribocatalytic activity.

Enhanced piezo-catalysis in ZnO rods with built-in nanopores

Strategies to improve the efficiency of piezoelectric catalysis have long focused on piezo-optical coupling and construction of heterojunctions.However,it is a challenge to reinforce the performance of piezoelectric catalysis in a single material.Herein the built-in nanopores in single crystal ZnO rods are employed to form stress to intensify piezo-catalytic efficiency.The piezo-catalytic efficiency of the ZnO rods with built-in nanopores(holey ZnO NRs)for degrading dyes was about 1.7 times that of the ZnO rods without built-in nanopores(ZnO NRs).X-ray diffraction and Raman peaks of holey ZnO NRs appeared blue-shifted in comparison to ZnO NRs,uncovering the existence of tensile stress in holey ZnO NRs.The piezoelectric coefficient d_(33) of holey ZnO NRs increased by 1.92 times,triggering the amplification of piezoelectric catalytic property.Additionally,the piezoelectric current,carrier lifetime,and diffusion length of holey ZnO NRs were larger than that of ZnO NRs,respectively.These factors all contribute to the enhanced piezoelectric catalytic efficiency of holey ZnO NRs.This work demonstrates that the method of induced stress with built-in nanopores is a promising strategy for improving the piezoelectric catalytic efficiency of single-crystal ZnO rods.

Flexoelectric materials and their related applications: A focused review

Flexoelectricity refers to the mechanical-electro coupling between strain gradient and electric polarization, and conversely, the electro-mechanical coupling between electric field gradient and mechanical stress. This unique effect shows a promising size effect which is usually large as the material dimension is shrunk down. Moreover, it could break the limitation of centrosymmetry, and has been found in numerous kinds of materials which cover insulators, liquid crystals, biological materials, and semiconductors. In this review, we will give a brief report about the recent discoveries in flexoelectricity, focusing on the flexoelectric materials and their applications. The theoretical developments in this field are also addressed. In the end, the perspective of flexoelectricity and some open questions which still remain unsolved are commented upon.

A low-firing melilite ceramic Ba2CuGe207 and compositional modulation on microwave dielectric properties through Mg substitution

A melilite Ba2CuGe2O7 ceramic was characterized by low sintering temperature and moderate microwave dielectric properties.Sintered at 960℃,the Ba2CuGe2O7 ceramic had a high relative density 97%,a low relative permittivity(εr)9.43,a quality factor(Q×f)of 20,000 GHz,and a temperature coefficient of resonance frequency(τf)-76 ppm/℃.To get a deep understanding of the relationship between composition,structure,and dielectric performances,magnesium substitution for copper in Ba2CuGe2O7 was conducted.Influences of magnesium doping on the sintering behavior,crystal structure,and microwave dielectric properties were studied.Mg doping in Ba2CuGe2O7 caused negligible changes in the macroscopic crystal structure,grain morphology,and size distribution,while induced visible variation in the local structure as revealed by Raman analysis.Microwave dielectric properties exhibit a remarkable dependence on composition.On increasing the magnesium content,the relative permittivity featured a continuous decrease,while both the quality factor and the temperature coefficient of resonance frequency increased monotonously.Such variations in dielectric performances were clarified in terms of the polarizability,packing fraction,and band valence theory.

Electric modulation of conduction in MAPbBr_(3) single crystals

The resistive switching(RS)mechanism of hybrid organic–inorganic perovskites has not been clearly understood until now.A switchable diode-like RS behavior in MAPbBr3 single crystals using Au(or Pt)symmetric electrodes is reported.Both the high resistance state(HRS)and low resistance state(LRS)are electrode-area dependent and light responsive.We propose an electric-fielddriven inner p–n junction accompanied by a trap-controlled space-charge-limited conduction(SCLC)conduction mechanism to explain this switchable diode-like RS behavior in MAPbBr_(3) single crystals.

Flexoelectricity in dielectrics:Materials,structures and characterizations

Flexoelectricity in dielectrics suggests promising smart structures for sensors,actuators and transducers.In this review,dielectric materials,structures and the associated flexoelectric characterization methods are presented.First of all,we review structures and methods to measure different flexoelectric coefficients,including
μ1122;μ1111;μ1211;μ3121;μ2312;μ1123,etc.,via direct or converse flexoelectric effect.The flexoelectric materials in the form of bulk,thin films and 2D materials and the reported flexoelectric properties of these dielectrics will then be discussed.Semiconductor materials and the associated flexoelectric studies will also be reviewed.The progress of flexoelectric device study will next be presented,followed by the flexoelectricity research challenges and future trend.

Pulsed laser deposition of amorphous InGaZnO_(4)as an electron transport layer for perovskite solar cells

Hybrid perovskite solar cells(PSCs)have been intensively studied in recent years because of their high efficiency and low costs.For PSCs,the electron transport layer(ETL)is a key for its photoelectric conversion efficiency.Here we demonstrate the application of amorphous InGaZnO_(4)thin films as ETL for efficient PSCs by pulsed laser deposition(PLD).The PSC device using such InGaZnO_(4)amorphous film as ETL has achieved an efficiency of 15.1%.The outstanding performance is attributed to the excellent properties of amorphous InGaZnO_(4)oxide thin films,including high electron mobility and high transparency,what is more,the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process.Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.