Objective The aim of the study was to evaluate the efficiency of salvage treatments for prostate specific antigen(PSA)relapse of cT3N0M0 prostatic adenocarcinoma(PCa)after radical prostatectomy(RP)combined with neoadj...Objective The aim of the study was to evaluate the efficiency of salvage treatments for prostate specific antigen(PSA)relapse of cT3N0M0 prostatic adenocarcinoma(PCa)after radical prostatectomy(RP)combined with neoadjuvant androgen deprivation(ADT).Methods A total of 332 patients with cT3N0M0 PCa were enrolled in the prospective study and received RP and pelvic lymph node dissection with neoadjuvant ADT for 3 months.All patients with PSA relapse were treated with salvage external beam radiation therapy(RT)and ADT for 6 months.Results The 5-year postoperative PSA relapse rate was 40.96%(136/332).The patients have been divided into the PSA relapse and PSA relapse-free groups in order to compare patient characteristics.The ratio of patients with Gleason score≥8 and positive surgical margin in the PSA relapse group were significantly higher than those of in the PSA relapse-free group(P=0.01).The mean duration between the start of operative treatment and PSA relapse was 31 months.Salvage treatment to all 136 PSA relapse patients led to favorable outcomes.PSA relapse was not observed after salvage treatment by the end of follow-up.The 5-year overall survival rates of the PSA relapse and PSA relapse-free groups were 94.9%and 93.9%,respectively.Conclusion In pursuit of curative treatment,our study showed that RP combined with neoadjuvant ADT is an aggressive multimodality strategy associated with lower PSA relapse and better survival outcomes for stage cT3N0M0 PCa patients.Patients with PSA relapse after RP may benefit from early aggressive salvage RT combined with short-term ADT.展开更多
Contact engineering is of critical importance for two-dimensional(2D)transition metal dichalcogenide(TMD)-based devices.However,there are only a few solutions to overcome this obstacle because of the complexity of the...Contact engineering is of critical importance for two-dimensional(2D)transition metal dichalcogenide(TMD)-based devices.However,there are only a few solutions to overcome this obstacle because of the complexity of the TMD-contact interface.In this work,we propose a novel method using a soft plasma treatment followed by the seamless deposition of a metal electrode to reduce the contact resistance of MoS_(2)field effect transistors(FETs).The treated FETs exhibit three times higher mobility than the control FETs without plasma treatment.The soft plasma treatment can remove the facial sulfur atoms and expose the middle Mo atoms so that they come into direct contact with the metal electrode,thus greatly improving the contact behavior.First-principles calculation is also performed to support the experimental results.Our potentially scalable strategy can be extended to the whole family of TMD based FETs to provide a possible route of device processsing technology for 2D device application.展开更多
文摘Objective The aim of the study was to evaluate the efficiency of salvage treatments for prostate specific antigen(PSA)relapse of cT3N0M0 prostatic adenocarcinoma(PCa)after radical prostatectomy(RP)combined with neoadjuvant androgen deprivation(ADT).Methods A total of 332 patients with cT3N0M0 PCa were enrolled in the prospective study and received RP and pelvic lymph node dissection with neoadjuvant ADT for 3 months.All patients with PSA relapse were treated with salvage external beam radiation therapy(RT)and ADT for 6 months.Results The 5-year postoperative PSA relapse rate was 40.96%(136/332).The patients have been divided into the PSA relapse and PSA relapse-free groups in order to compare patient characteristics.The ratio of patients with Gleason score≥8 and positive surgical margin in the PSA relapse group were significantly higher than those of in the PSA relapse-free group(P=0.01).The mean duration between the start of operative treatment and PSA relapse was 31 months.Salvage treatment to all 136 PSA relapse patients led to favorable outcomes.PSA relapse was not observed after salvage treatment by the end of follow-up.The 5-year overall survival rates of the PSA relapse and PSA relapse-free groups were 94.9%and 93.9%,respectively.Conclusion In pursuit of curative treatment,our study showed that RP combined with neoadjuvant ADT is an aggressive multimodality strategy associated with lower PSA relapse and better survival outcomes for stage cT3N0M0 PCa patients.Patients with PSA relapse after RP may benefit from early aggressive salvage RT combined with short-term ADT.
基金the National Key Research and Development Program(No.2016YFA0203900)the Shanghai Municipal Science and Technology Commission(No.18JC1410300)+5 种基金the National Natural Science Foundation of China(Nos.61874154,61874060,61911530220,U1932159)financial support from the Fundamental Research Funds for the Central Universities of China(No.JUSRP51726B)the“111 Project”(No.B12018)the Postgraduate Research and Practice Innovation Program of Jiangsu Province(No.KYCX181860)the Jiangsu SpeciallyAppointed Professor Program,the Natural Science Foundation of Jiangsu Province(No.BK20181388)the Oversea Researcher Innovation Program of Nanjing,NUPTSF(No.NY217118)。
文摘Contact engineering is of critical importance for two-dimensional(2D)transition metal dichalcogenide(TMD)-based devices.However,there are only a few solutions to overcome this obstacle because of the complexity of the TMD-contact interface.In this work,we propose a novel method using a soft plasma treatment followed by the seamless deposition of a metal electrode to reduce the contact resistance of MoS_(2)field effect transistors(FETs).The treated FETs exhibit three times higher mobility than the control FETs without plasma treatment.The soft plasma treatment can remove the facial sulfur atoms and expose the middle Mo atoms so that they come into direct contact with the metal electrode,thus greatly improving the contact behavior.First-principles calculation is also performed to support the experimental results.Our potentially scalable strategy can be extended to the whole family of TMD based FETs to provide a possible route of device processsing technology for 2D device application.
