In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb^(3+) and Yb^(3+)-doped silicon nitride(SiN_x) layers by low-cost screen-printing methods. The performances of c-Si solar ...In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb^(3+) and Yb^(3+)-doped silicon nitride(SiN_x) layers by low-cost screen-printing methods. The performances of c-Si solar cells can be enhanced by rare-earth ions doped SiN_x layers via the mechanism of spectrum conversion.These SiN_x doped and codoped thin films were deposited by reactive magnetron co-sputtering and integrated as the antireflection coating layers in c-Si solar cells. The characterizations of SiN_x, SiN_x:Tb^(3+) tand SiN_x:Tb^(3+)-Yb^(3+) thin films were conducted by means of photoluminescence, Rutherford backscattering spectroscopy, Ellipsometry spectroscopy and Fourier transform infrared measurements. Their composition and refractive index was optimized to obtain good anti-reflection coating layer for c-Si solar cells.Transmission electron microscopy performs the uniform coatings on the textured emitter of c-Si solar cells. After the metallization process, we demonstrate monolithic c-Si solar cells with spectrum conversion layers, which lead to a relative increase by 1.34% in the conversion efficiency.展开更多
基金Project supported by Ministry of Science and Technology,Taiwan(MOST 105-2911-I-259-501)the French Agence Nationale de Recherche through the GENESE Project(ANR-13-BSS09-0020-01)the French Ministry of Research through the ORCHID Project(33572XF)
文摘In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb^(3+) and Yb^(3+)-doped silicon nitride(SiN_x) layers by low-cost screen-printing methods. The performances of c-Si solar cells can be enhanced by rare-earth ions doped SiN_x layers via the mechanism of spectrum conversion.These SiN_x doped and codoped thin films were deposited by reactive magnetron co-sputtering and integrated as the antireflection coating layers in c-Si solar cells. The characterizations of SiN_x, SiN_x:Tb^(3+) tand SiN_x:Tb^(3+)-Yb^(3+) thin films were conducted by means of photoluminescence, Rutherford backscattering spectroscopy, Ellipsometry spectroscopy and Fourier transform infrared measurements. Their composition and refractive index was optimized to obtain good anti-reflection coating layer for c-Si solar cells.Transmission electron microscopy performs the uniform coatings on the textured emitter of c-Si solar cells. After the metallization process, we demonstrate monolithic c-Si solar cells with spectrum conversion layers, which lead to a relative increase by 1.34% in the conversion efficiency.