A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in w...A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.展开更多
A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported.The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper.Seebeck measurement con...A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported.The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper.Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film.The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of （101） of ZnO film.The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer.The estimated bandgap of Cu-doped ptype ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K.The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using ATLAS^（TM） device simulator.展开更多
文摘A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.
文摘A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported.The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper.Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film.The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of （101） of ZnO film.The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer.The estimated bandgap of Cu-doped ptype ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K.The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using ATLAS^（TM） device simulator.
