The growth of crystalline Si(c-Si)via direct electron beam writing shows promise for fabricating Si nanomaterials due to its ultrahigh resolution.However,to increase the writing speed is a major obstacle,due to the la...The growth of crystalline Si(c-Si)via direct electron beam writing shows promise for fabricating Si nanomaterials due to its ultrahigh resolution.However,to increase the writing speed is a major obstacle,due to the lack of systematic experimental explorations of the growth process and mechanisms.This paper reports a systematic experimental investigation of the beaminduced formation of c-Si nanoparticles(NPs)from amorphous SiO_(2) under a range of doses and temperatures by in situ transmission electron microscopy at the atomic scale.A three-orders-of-magnitude writing speed-up is identified under 80 keV irradiation at 600℃ compared with 300 keV irradiation at room temperature.Detailed analysis reveals that the self-organization of c-Si NPs is driven by reduction of c-Si effective free energy under electron irradiation.This study provides new insights into the formation mechanisms of c-Si NPs during direct electron beam writing and suggests methods to improve the writing speed.展开更多
基金This research was supported by the National Natural Science Foundation of China(Grant Nos.:51420105003,11327901,and 61601116)the National Science Fund for Distinguished Young Scholars(Grant No.:11525415)+1 种基金the Fundamental Research Funds for the Central Universities(2242018K40102)the Natural Science Foundation of Jiangsu Province(BK20181284).
文摘The growth of crystalline Si(c-Si)via direct electron beam writing shows promise for fabricating Si nanomaterials due to its ultrahigh resolution.However,to increase the writing speed is a major obstacle,due to the lack of systematic experimental explorations of the growth process and mechanisms.This paper reports a systematic experimental investigation of the beaminduced formation of c-Si nanoparticles(NPs)from amorphous SiO_(2) under a range of doses and temperatures by in situ transmission electron microscopy at the atomic scale.A three-orders-of-magnitude writing speed-up is identified under 80 keV irradiation at 600℃ compared with 300 keV irradiation at room temperature.Detailed analysis reveals that the self-organization of c-Si NPs is driven by reduction of c-Si effective free energy under electron irradiation.This study provides new insights into the formation mechanisms of c-Si NPs during direct electron beam writing and suggests methods to improve the writing speed.
