The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se_(2)based solar cells is shown.The fabrication used an industry scalable lithography technique—nanoimprint lithography(NIL)—for a 15×...The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se_(2)based solar cells is shown.The fabrication used an industry scalable lithography technique—nanoimprint lithography(NIL)—for a 15×15 cm^(2)dielectric layer patterning.Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography(EBL)patterning,using rigid substrates.The NIL patterned device shows similar performance to the EBL patterned device.The impact of the lithographic processes in the rigid solar cells’performance were evaluated via X-ray Photoelectron Spectroscopy and through a Solar Cell Capacitance Simulator.The device on stainless-steel showed a slightly lower performance than the rigid approach,due to additional challenges of processing steel substrates,even though scanning transmission electron microscopy did not show clear evidence of impurity diffusion.Notwithstanding,time-resolved photoluminescence results strongly suggested elemental diffusion from the flexible substrate.Nevertheless,bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device.展开更多
基金InovSolarCells(PTDC/FISMAC/29696/2017)co-funded by FCT and the ERDF through COMPETE2020And by the European Union’s Horizon 2020 research and innovation programme under the grants agreements N°.720887(ARCIGS-M project)+2 种基金grand agreement N°.715027(Uniting PV)P.M.P.S.and P.A.F.would like to acknowledge FCT for the support of the project FCT UIDB/04730/2020This work was developed within the scope of the project i3N,UIDB/50025/2020&UIDP/50025/2020,financed by national funds through the FCT/MEC.
文摘The incorporation of interface passivation structures in ultrathin Cu(In,Ga)Se_(2)based solar cells is shown.The fabrication used an industry scalable lithography technique—nanoimprint lithography(NIL)—for a 15×15 cm^(2)dielectric layer patterning.Devices with a NIL nanopatterned dielectric layer are benchmarked against electron-beam lithography(EBL)patterning,using rigid substrates.The NIL patterned device shows similar performance to the EBL patterned device.The impact of the lithographic processes in the rigid solar cells’performance were evaluated via X-ray Photoelectron Spectroscopy and through a Solar Cell Capacitance Simulator.The device on stainless-steel showed a slightly lower performance than the rigid approach,due to additional challenges of processing steel substrates,even though scanning transmission electron microscopy did not show clear evidence of impurity diffusion.Notwithstanding,time-resolved photoluminescence results strongly suggested elemental diffusion from the flexible substrate.Nevertheless,bending tests on the stainless-steel device demonstrated the mechanical stability of the CIGS-based device.
